Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/
Electrical and reliability properties of ultrathin La 2 O 3 gate dielectric have been
investigated. The measured capacitance of 33/spl Aring/La 2 O 3 gate dielectric is 7.2 μF/cm …
investigated. The measured capacitance of 33/spl Aring/La 2 O 3 gate dielectric is 7.2 μF/cm …
Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures
MV Fischetti - Journal of Applied Physics, 2001 - pubs.aip.org
In metal–oxide–semiconductor structures with polycrystalline Si gates, electrons in the
inverted channel of the substrate scatter with electrons in the gate via long-range Coulomb …
inverted channel of the substrate scatter with electrons in the gate via long-range Coulomb …
Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides
N Yang, WK Henson, JR Hauser… - IEEE Transactions on …, 2000 - ieeexplore.ieee.org
The effects of remote charge scattering on the electron mobility of n-MOSFETs with ultrathin
gate oxides from 1.5 nm to 3.2 nm have been estimated. By calculating the scattering rate of …
gate oxides from 1.5 nm to 3.2 nm have been estimated. By calculating the scattering rate of …
New mechanism for oxidation of native silicon oxide
Continued miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFETs)
requires an ever-decreasing thickness of the gate oxide. The structure of ultrathin silicon …
requires an ever-decreasing thickness of the gate oxide. The structure of ultrathin silicon …
Stack gate PZT/Al2O3 one transistor ferroelectric memory
We have developed a single transistor ferroelectric memory using stack gate PZT/Al/sub
2/O/sub 3/structure. For the same/spl sim/40/spl Aring/dielectric thickness, the PZT/Al/sub …
2/O/sub 3/structure. For the same/spl sim/40/spl Aring/dielectric thickness, the PZT/Al/sub …
Impact of UV annealing on the hole effective mobility in SnO pFET
Using ultraviolet (UV) annealing through wide energy bandgap HfO2/SiO2 gate dielectric,
nanosheet SnO pFET achieved hole effective mobility (µeff) from 55 cm2/Vs at low hole …
nanosheet SnO pFET achieved hole effective mobility (µeff) from 55 cm2/Vs at low hole …
Remote Coulomb scattering in metal–oxide–semiconductor field effect transistors: Screening by electrons in the gate
F Gamiz, MV Fischetti - Applied physics letters, 2003 - pubs.aip.org
The effect of screening of remote Coulomb scattering (RCS) by free electrons in the
polycrystalline silicon (polysilicon) gate of a metal–oxide–semiconductor transistor has been …
polycrystalline silicon (polysilicon) gate of a metal–oxide–semiconductor transistor has been …
Improved theory for remote-charge-scattering-limited mobility in metal–oxide–semiconductor transistors
S Saito, K Torii, M Hiratani, T Onai - Applied physics letters, 2002 - pubs.aip.org
Transport theory is extended to include the remote-charge-scattering-limited electron
mobility of metal–oxide–semiconductor field-effect transistors. We evaluated remote-charge …
mobility of metal–oxide–semiconductor field-effect transistors. We evaluated remote-charge …
Scattering of electrons in silicon inversion layers by remote surface roughness
Scaling complementary metal–oxide–semiconductor CMOS devices to smaller dimensions
while maintaining good control of the short-channel effects, makes it necessary to reduce the …
while maintaining good control of the short-channel effects, makes it necessary to reduce the …
Photoemission from the Sr/Si (001) interface
A Herrera-Gomez, FS Aguirre-Tostado, Y Sun… - Journal of Applied …, 2001 - pubs.aip.org
One of the major technical barriers to reducing the feature size of integrated circuits to and
below 0.1 m is the replacement of SiO2 as the insulating layer in transistor gates. As …
below 0.1 m is the replacement of SiO2 as the insulating layer in transistor gates. As …