A continuous exponential rise has been observed in the storage and processing of the data
that may not curtail in the foreseeable future. The required data processing speed and …

The applications of piezoelectric nanogenerators (PENGs) as a sustainable power source
for portable electronic devices are still limited due to low voltage output ranging from mini-to …

We report on the effects on water oxidation performance of varying (1) the nanoscale TiO2
thickness and (2) the catalyst material in catalyst/TiO2/SiO2/Si anodes. Uniform films of …

Ferroelectric field-effect transistors (FeFETs) based on HfO 2 are promising for low-power
and high-speed non-volatile memory devices. However, most reported FeFETs show limited …

Thin-film transistors (TFTs) with channels made of hydrogenated amorphous silicon (a-Si: H)
and polycrystalline silicon (poly-Si) are used extensively in the display industry. Amorphous …

The performance of thin film metal-insulator-metal (MIM) diodes is investigated for a variety
of large and small electron affinity insulators using ultrasmooth amorphous metal as the …

The impact of nanolaminate insulator tunnel barriers on asymmetric metal workfunction
metal-insulator-insulator-metal (MIIM) devices is investigated. We demonstrate …

Gold nanoparticles (AuNPs) deposited on a doped silicon substrate induce a local band
bending and a local accumulation of positive charges in a semiconductor. Unlike the case of …

Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and
nanolaminate Al 2 O 3-Ta 2 O 5 bilayer tunnel barriers deposited by atomic layer deposition …

In this work, the resistive switching characteristics of MgO/Al 2 O 3-based resistive random-
access memory (ReRAM) devices have been reported. Analysis shows the change in …