(57) ABSTRACT A thin-film storage transistor includes (a) first and second polysilicon layers
of a first conductivity serving, respec tively, as a source terminal and a drain terminal of the …

NOR memory strings may be used for implementations of logic functions involving many
Boolean variables, or to generate analog signals whose magnitudes are each …

Some embodiments include an integrated assembly having a ferroelectric transistor body
region between a first comparative digit line and a second comparative digit line. A carrier …

Some embodiments include a memory cell with two tran sistors and one capacitor. The
transistors are a first transistor and a second transistor. The capacitor has a first node …

Some embodiments include a memory cell with two tran sistors and one capacitor. The
transistors are a first transistor and a second transistor. The capacitor has a first node …

BACKGROUND The use of an access device with a storage element in memory cells is well
known in the art. Examples of memory devices that utilize access devices include dynamic …

(57) ABSTRACT A first circuit formed on a first semiconductor substrate is wafer-bonded to a
second circuit formed on a second memory circuit, wherein the first circuit includes …

Some embodiments include an apparatus having a transistor associated with a vertically-
extending semiconductor pillar. The transistor includes an upper source/drain region within …

(57) ABSTRACT A shared memory provides multi-channel access from multiple computing
or host devices. A priority circuit prioritizes the multiple memory requests that are submitted …

Some embodiments include an integrated assembly having a carrier-sink-structure, and
having digit lines over the carrier-sink-structure. Transistor body regions are over the digit …