Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor
J Chen, MY Sun, ZH Wang, Z Zhang, K Zhang… - Nano-Micro Letters, 2024 - Springer
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-
scale manipulation, challenging the conventional limitations of semiconductor materials …
scale manipulation, challenging the conventional limitations of semiconductor materials …
Study of analog performance of common source amplifier using rectangular core–shell based double gate junctionless transistor
A new state of the art double gate junctionless transistor (DGJLT) namely the rectangular
core–shell DGJLT (RCS-DGJLT) based common source amplifier circuit is designed to …
core–shell DGJLT (RCS-DGJLT) based common source amplifier circuit is designed to …
Correlation of core thickness and core doping with gate & spacer dielectric in rectangular core shell double gate junctionless transistor
The impression of gate dielectric and spacer dielectric on the performance of rectangular
core shell double gate junctionless transistor (RCS-DGJLT) using extensive simulations is …
core shell double gate junctionless transistor (RCS-DGJLT) using extensive simulations is …
Modeling threshold voltage and drain-induced barrier lowering effect of opposite doping core–shell channel surrounding-gate junctionless MOSFET
L Xu, G Wu, P Li, T Cheng - Microelectronics Journal, 2023 - Elsevier
For the sake of promoting core–shell channel (CSC) junctionless (JL) MOSFET, this paper
models opposite doping core–shell channel (ODCSC) surrounding-gate (SG) JL MOSFET …
models opposite doping core–shell channel (ODCSC) surrounding-gate (SG) JL MOSFET …
Band offset and leakage current in fluorine doped Si/HfO2/SiO2 gate stack of metal oxide semiconductor field effect transistors: An ab initio investigation
Ab initio calculations were employed to investigate the influence of Fluorine doping in the
gate dielectric stacks of state-of-the-art metal-oxide-semiconductor field-effect transistors …
gate dielectric stacks of state-of-the-art metal-oxide-semiconductor field-effect transistors …
Influence of deep level trap charges on the reliability of asymmetric doped double gate JunctionLess transistor (AD-DG-JLT)
A study based on the numerical simulation of Double Gate JunctionLess Transistor DG-JLT
has been presented under the influence of Trap Charges (TC) inside the oxide or at the …
has been presented under the influence of Trap Charges (TC) inside the oxide or at the …
Performance analysis of short channel effects immune JLFET with enhanced drive current
This manuscript reports analog/RF and noise analysis of a novel junctionless field effect
transistor. To reduce the gate induced drain leakage (GIDL), step‐gate‐oxide structure is …
transistor. To reduce the gate induced drain leakage (GIDL), step‐gate‐oxide structure is …
Performance Evaluation of Nano-scale Core–Shell Junctionless FETs in the Designing of Ultralow-Power Inverter and Ring Oscillator
S Seifollahi, SAS Ziabari, A kiani-Sarkaleh - Journal of Electronic Materials, 2024 - Springer
A core–shell junctionless field-effect transistor (CS-JLFET) has been utilized for designing
ultra-low-power inverter and ring oscillator circuits. The core doping can be considered as …
ultra-low-power inverter and ring oscillator circuits. The core doping can be considered as …
Core-shell architecture and channel suppression: unleashing the potential of SC_RCS_DGJLFET
A Himral, R Sharma, M Agarwal - Physica Scripta, 2024 - iopscience.iop.org
In this investigation, a suppressed channel-rectangular core–shell double gate junctionless
field effect transistor (SC_RCS_DGJLFET) is simulated to enhance the junctionless device's …
field effect transistor (SC_RCS_DGJLFET) is simulated to enhance the junctionless device's …
Correlation betweenWork function and silicon thickness of double gate junctionless field effect transistor
The correlation between silicon thickness and work function difference plays an important
role to achieve best performance of field effect transistor. In this paper, a p-type double gate …
role to achieve best performance of field effect transistor. In this paper, a p-type double gate …