Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
Providing for three-dimensional memory cells having enhanced electric field characteristics
and/or memory cells located at broken interconnects is described herein. By way of …
and/or memory cells located at broken interconnects is described herein. By way of …
Resistive memory using SiGe material
W Lu - US Patent 8,374,018, 2013 - Google Patents
US8374018B2 - Resistive memory using SiGe material - Google Patents US8374018B2 -
Resistive memory using SiGe material - Google Patents Resistive memory using SiGe material …
Resistive memory using SiGe material - Google Patents Resistive memory using SiGe material …
Field programmable gate array utilizing two-terminal non-volatile memory
M Asnaashari, H Nazarian, S Nguyen - US Patent 10,056,907, 2018 - Google Patents
A method for an FPGA includes coupling a first electrode of a first resistive element to a first
input voltage, coupling a second electrode of a second resistive element to a second input …
input voltage, coupling a second electrode of a second resistive element to a second input …
Interface control for improved switching in RRAM
A memory device has a crossbar array including a first array of first electrodes extending
along a first direction. A second array of second electrodes extends along a second …
along a first direction. A second array of second electrodes extends along a second …
Vertical diodes for non-volatile memory device
SB Herner - US Patent 8,394,670, 2013 - Google Patents
(57) ABSTRACT A steering device. The steering device includes an n-type impurity region
comprising a Zinc oxide material and a p-type impurity region comprising a silicon …
comprising a Zinc oxide material and a p-type impurity region comprising a silicon …
Pillar structure for memory device and method
SB Herner - US Patent 8,519,485, 2013 - Google Patents
A method of forming a memory device. The method provides a semiconductor substrate
having a surface region. A first dielectric layer is formed overlying the surface region of the …
having a surface region. A first dielectric layer is formed overlying the surface region of the …
Conductive path in switching material in a resistive random access memory device and control
SH Jo - US Patent 8,558,212, 2013 - Google Patents
(57) ABSTRACT A non-volatile memory device structure. The device structure includes a first
electrode, a second electrode, a resistive Switching material comprising an amorphous …
electrode, a second electrode, a resistive Switching material comprising an amorphous …
Hetero resistive switching material layer in RRAM device and method
SH Jo - US Patent 8,467,227, 2013 - Google Patents
(57) ABSTRACT A non-volatile memory device includes a first electrode, a resistive
Switching material Stack overlying the first elec trode. The resistive Switching material stack …
Switching material Stack overlying the first elec trode. The resistive Switching material stack …
Three-dimensional oblique two-terminal memory with enhanced electric field
SH Jo, J Bettinger, LIU Xianliang - US Patent 9,627,443, 2017 - Google Patents
Related US Application Data is a continuation-in-part of application No. 13/525, 096, filed on
Jun. 15, 2012, now Pat. No. 9,058,865, said application No. 14/027,045 is a continuation-in …
Jun. 15, 2012, now Pat. No. 9,058,865, said application No. 14/027,045 is a continuation-in …