During the past few decades, silicon carbide (SiC) has emerged as the most promising wide-
bandgap semiconductor for high-temperature, high-frequency, and high-power applications …

Настоящая коллективная монография содержит теоретические и экспериментальные
результаты по методам выращивания монокристаллов и эпитаксиальных пленок SiC, а …

Ni2Si, NiSi and NiSi2 contacts were prepared on n-type 4H–and 6H–SiC (0001) by
deposition of Ni and Si multilayers in the respective stoichiometry after high-temperature …

Abstract Large area (A= 6 cm 2), thin tantalum films (5 nm< d< 100 nm) are accomplished by
evaporation from tantalum rods using small pocket e-beam evaporators. Using a sample to …

Abstract Ni (50 nm)/Ti (10 nm) and Ni (50 nm) contact structures were deposited by vacuum
evaporation on n-type 6H–SiC with various doping level. Prior to deposition, part of the …

Si ohmic contacts on N-type 4H–and 6H–SiC with contact resistivity comparable with Ni
metallizations were prepared. After etching-off of the Si contacts and deposition of new …

Characteristics of tantalum silicon nitride (TaSiN) thin films have been investigated as an
electrode material for Ge2Sb2Te5 chalcogenide phase change material. The films were …

Ni silicides contacts, which are expected to be advantageous contact materials on SiC, were
tested in this work. Prepared contact structures were ohmic with low contact resistivity …

采用浓度为10% 的氢氟酸(HF) 刻蚀6H. SiC 单晶片, 研究了HF 刻蚀时间对Ni/6H. SiC
接触性质的影响. 经24 h 刻蚀的SiC 基片在溅射Ni 层后, 其接触表现良好线性的电流. 电压(IV) …

Every day in our life is larded with a huge number of chemical reactions on surfaces. Some
reactions occur immediately, for others an activation energy has to be supplied. Thus it …