The technological development of GaN high electron mobility transistor (HEMT) is on the
right track to compete with Si and SiC-based power transistors for the market segment of> …

This study intends to investigate the effects of barrier scaling, a crucial RF GaN-HEMT
design element, which is imperative to achieve enhanced performance at nano-scale …

The design and development of green and chemical nanomaterials is crucial because these
systems can possess desired and manipulative photocatalysis and electrocatalysis. To …

In this study, the influence of AlN barrier thickness (tb) on the RF & DC performances of 50
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …

We report on a vertically scaled AlN/GaN high electron mobility transistor technology design
optimization for millimeter-wave applications. The undoped GaN channel thickness and …

This work investigated and proposed the source–gate dual field plate (SG-FP) AlGaN/GaN
HEMT for different gate-to-drain drift distances with a fixed gate length of 0.25 μ m using …

In this paper, we report DC and RF analysis of a T‐gate AlN/β‐Ga2O3 high electron mobility
transistors (HEMTs) by optimizing the gate‐drain distance (L GD) and two T‐gate …

In this work, we report an effective room-temperature passivation strategy for GaN-on-Si high-
electron-mobility transistors (HEMTs) to improve device stability by introducing a spin-coated …

In this simulation work, the effect of Al x Ga 1-x N and In x Ga 1-x N back barriers (BB) on the
RF & DC performances of recessed T-gated Fe-doped AlN/GaN/SiC HEMT device is …

The work function (φ m) of gate metal is crucial to electrical characteristics in standard GaN-
based high electron mobility transistors (HEMTs). In this simulation report, RF & DC …