Towards micro-PeLED displays
The miniaturization of conventional light-emitting diodes (LEDs) is a growing trend for
emerging virtual and augmented reality and ultrahigh-resolution display applications …
emerging virtual and augmented reality and ultrahigh-resolution display applications …
Progress of InGaN-based red micro-light emitting diodes
InGaN-based red micro-size light-emitting diodes (μLEDs) have become very attractive.
Compared to common AlInGaP-based red µLEDs, the external quantum efficiency (EQE) of …
Compared to common AlInGaP-based red µLEDs, the external quantum efficiency (EQE) of …
The micro-LED roadmap: status quo and prospects
Micro light-emitting diode (micro-LED) will play an important role in the future generation of
smart displays. They are found very attractive in many applications, such as maskless …
smart displays. They are found very attractive in many applications, such as maskless …
Red InGaN micro-light-emitting diodes (> 620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact
We present efficient red InGaN 60× 60 μm 2 micro-light-emitting diodes (μLEDs) with an
epitaxial tunnel junction (TJ) contact. The TJ was grown by metal-organic chemical vapor …
epitaxial tunnel junction (TJ) contact. The TJ was grown by metal-organic chemical vapor …
Significant quantum efficiency enhancement of InGaN red micro-light-emitting diodes with a peak external quantum efficiency of up to 6%
We demonstrate a significant quantum efficiency enhancement of InGaN red micro-light-
emitting diodes (μLEDs). The peak external quantum efficiency (EQE) of the packaged 80× …
emitting diodes (μLEDs). The peak external quantum efficiency (EQE) of the packaged 80× …
Recent progress on micro-LEDs
With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving
towards displays with high efficiency, small size, and ultrahigh resolution, the development …
towards displays with high efficiency, small size, and ultrahigh resolution, the development …
Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 μm
In this paper, the GaN-based green micro light-emitting diodes (Micro-LEDs) with various
sizes (from 3 to 100 μm) were fabricated and electro-optically characterized. Atom layer …
sizes (from 3 to 100 μm) were fabricated and electro-optically characterized. Atom layer …
High-temperature electroluminescence properties of InGaN red 40× 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%
We study the high-temperature electroluminescence properties of 600 nm InGaN red 40× 40
μm 2 micro-light-emitting diodes (μLEDs) with a peak external quantum efficiency (EQE) of …
μm 2 micro-light-emitting diodes (μLEDs) with a peak external quantum efficiency (EQE) of …
Demonstration of ultra-small 5× 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%
Red micro-size light-emitting diodes (μLEDs) less than 10× 10 μm 2 are crucial for
augmented reality (AR) and virtual reality (VR) applications. However, they remain very …
augmented reality (AR) and virtual reality (VR) applications. However, they remain very …
Bottom‐Up Formation of III‐Nitride Nanowires: Past, Present, and Future for Photonic Devices
The realization of semiconductor heterostructures marks a significant advancement beyond
silicon technology, driving progress in high‐performance optoelectronics and photonics …
silicon technology, driving progress in high‐performance optoelectronics and photonics …