Impact ionization, avalanche and breakdown phenomena form the basis of many very
interesting and important semiconductor devices, such as avalanche photodiodes …

In this paper, ways to create silicon carbide p+-emitters with high injection coefficients are
considered. Raising the emitter doping level, eliminating the deteriorated layer, and making …

Carrier diffusivity has been experimentally determined in low-doped n-type epitaxial 4H–SiC
over a wide injection range using a Fourier transient grating technique. The data showed …

The transport formulation used in many commercial semiconductor device simulators (for
example DESSIS, ATLAS, and MEDICI) does not allow accurate modeling of electron-hole …

Systematic studies of breakdown phenomena in solids began more than 80 years ago, in
the early 1920s. Approximately at the same time it was found that the scenario for …

С учетом совокупности нелинейных физических эффектов: электронно-дырочного
рассеяния, оже-рекомбинации, сужения ширины запрещенной зоны, нелинейной …

A generalisation of the conventional relaxation-time approximation for bipolar transport with
electron-hole scattering is presented. A simple phenomenological ansatz leads to …

The electronic energy loss of high-energy heavy ions striking a reverse biased junction in an
electronic component designed for space induces an electron-hole pair (or bipolar) plasma …

The influence of the combined effects of high injection level and heavy doping on the
characteristics of silicon p+–n–n+ solar cells is examined. The total amount of nonlinear …

Analytical expressions describing the dependences of the p+–n-junction leakage current on
the doping level of the p+-type region are derived by taking into account a whole set of …