Technology roadmap for flexible sensors

Y Luo, MR Abidian, JH Ahn, D Akinwande… - ACS …, 2023 - ACS Publications
Humans rely increasingly on sensors to address grand challenges and to improve quality of
life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are …

2D materials in flexible electronics: recent advances and future prospectives

AK Katiyar, AT Hoang, D Xu, J Hong, BJ Kim… - Chemical …, 2023 - ACS Publications
Flexible electronics have recently gained considerable attention due to their potential to
provide new and innovative solutions to a wide range of challenges in various electronic …

Making clean electrical contacts on 2D transition metal dichalcogenides

Y Wang, M Chhowalla - Nature Reviews Physics, 2022 - nature.com
Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have
emerged as highly promising for new electronic technologies. However, a key challenge in …

Fermi level pinning dependent 2D semiconductor devices: challenges and prospects

X Liu, MS Choi, E Hwang, WJ Yoo, J Sun - Advanced Materials, 2022 - Wiley Online Library
Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Q Wang, L Cao, SJ Liang, W Wu, G Wang… - npj 2D Materials and …, 2021 - nature.com
Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …

Three-dimensional integration of two-dimensional field-effect transistors

D Jayachandran, R Pendurthi, MUK Sadaf, NU Sakib… - Nature, 2024 - nature.com
In the field of semiconductors, three-dimensional (3D) integration not only enables
packaging of more devices per unit area, referred to as 'More Moore'but also introduces …

Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents

Y Zhou, L Tong, Z Chen, L Tao, Y Pang… - Nature communications, 2023 - nature.com
Abstract Two-dimensional (2D) materials have been considered promising candidates for
future low power-dissipation and reconfigurable integrated circuit applications. However, 2D …

The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms

Y Shen, Z Dong, Y Sun, H Guo, F Wu, X Li… - Advanced …, 2022 - Wiley Online Library
Abstract 2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently
attracted considerable research interest in the context of their use in ultrascaled devices …

Van der Waals‐Interface‐Dominated All‐2D Electronics

X Zhang, Y Zhang, H Yu, H Zhao, Z Cao… - Advanced …, 2023 - Wiley Online Library
The interface is the device. As the feature size rapidly shrinks, silicon‐based electronic
devices are facing multiple challenges of material performance decrease and interface …

Anode interfacial modification for non‐fullerene polymer solar cells: Recent advances and prospects

N Ahmad, G Liang, P Fan, H Zhou - InfoMat, 2022 - Wiley Online Library
Recently, the power conversion efficiency (PCE) of single‐junction non‐fullerene polymer
solar cells (NF‐PSCs) has surpassed 19% due to the fast development of novel donor …