Current-matched III–V/Si epitaxial tandem solar cells with 25.0% efficiency
S Fan, JY Zhengshan, RD Hool, P Dhingra… - Cell reports physical …, 2020 - cell.com
III–V/Si epitaxial tandems with a 1.7-eV GaAsP top cell promise stable power conversion
efficiencies above the fundamental limit of Si single-junction cells. However, III–V/Si epitaxial …
efficiencies above the fundamental limit of Si single-junction cells. However, III–V/Si epitaxial …
Solar cells
SM Goodnick, C Honsberg - Springer Handbook of Semiconductor …, 2022 - Springer
In this review chapter, we present the current state of the art of photovoltaic device
technology. We begin with an overview of the fundamentals of solar cell device operation …
technology. We begin with an overview of the fundamentals of solar cell device operation …
A short review on long persistent luminescence materials and their application prospects in emerging photovoltaic devices
Considering global climate change concerns, issues related to the energy crisis and
technologies reliant on non-fossil renewable energy sources are in high demand. Solar …
technologies reliant on non-fossil renewable energy sources are in high demand. Solar …
23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations
Abstract A 2-terminal, dual-junction, epitaxially integrated, GaAsP/Si tandem solar cell with
an 3rd party certified efficiency of 23.4% was fabricated via MOCVD growth on an ex-situ …
an 3rd party certified efficiency of 23.4% was fabricated via MOCVD growth on an ex-situ …
GaAsP/SiGe tandem solar cells on porous Si substrates
P Caño, M Hinojosa, I García, R Beanland, DF Marrón… - Solar Energy, 2021 - Elsevier
III-V compound semiconductors and SiGe alloys can be combined to develop multijunction
solar cells on Silicon substrates with optimum bandgap combinations. Current …
solar cells on Silicon substrates with optimum bandgap combinations. Current …
Reduced dislocation introduction in III–V/Si heterostructures with glide-enhancing compressively strained superlattices
The novel use of a GaAs y P1–y/GaP compressively strained superlattice (CSS) to provide
enhanced control over misfit dislocation (MD) evolution and threading dislocation density …
enhanced control over misfit dislocation (MD) evolution and threading dislocation density …
A route to obtaining low-defect III–V epilayers on Si (100) utilizing MOCVD
Low-defect III–V multilayer structures grown on Si (100) open opportunities for a wide range
of cost-effective high-performance photovoltaic and optoelectronic devices. For that,(Al) GaP …
of cost-effective high-performance photovoltaic and optoelectronic devices. For that,(Al) GaP …
Growth of GaP layers on Si substrates in a standard MOVPE reactor for multijunction solar cells
Gallium phosphide (GaP) is an ideal candidate to implement a III-V nucleation layer on a
silicon substrate. The optimization of this nucleation has been pursued for decades, since it …
silicon substrate. The optimization of this nucleation has been pursued for decades, since it …
Loss analysis and design strategies enabling> 23% GaAsP/Si tandem solar cells
DL Lepkowski, JT Boyer, C Yi… - 2020 47th IEEE …, 2020 - ieeexplore.ieee.org
Detailed loss analysis of our previously reported 21.8%(unverified) monolithic GaAsP/Si
tandem cells has identified and quantified three main mechanisms limiting cell performance …
tandem cells has identified and quantified three main mechanisms limiting cell performance …
Designing an Epitaxially-Integrated DBR for Dislocation Mitigation in Monolithic GaAsP/Si Tandem Solar Cells
This work explores epitaxially integrated distributed Bragg reflectors (DBR) as a strategy to
mitigate the impact of threading dislocations on the performance of monolithic GaAs0. 75P0 …
mitigate the impact of threading dislocations on the performance of monolithic GaAs0. 75P0 …