Silicon-Germanium (SiGe) technology effectively merges the desirable attributes of
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …

“Extreme environment” electronics represent an important niche market in the trillion dollar
global electronics industry and span the operation of electronic circuits and systems in …

Space applications, nuclear physics, military operations, medical imaging, and especially
electronics (modern silicon processing) are obvious fields in which radiation damage can …

We investigate transistor-level layout-based techniques for SEE mitigation in advanced SiGe
HBTs. The approach is based on the inclusion of an alternate reverse-biased pn junction (n …

A comparison of heavy-ion-induced single-event transients (SETs) in silicon-germanium
heterojunction bipolar transistors (SiGe HBTs) fabricated on both bulk and silicon-on …

Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ion-induced current
transients are measured using Sandia National Laboratories' microbeam and high-and low …

This paper presents a thorough study of radiation effects on a frequency synthesizer
designed in a 0.18 μ m CMOS technology. In CMOS devices, the effect of a high energy …

In this paper, we present a novel circuit design approach for radiation hardened digital
electronics. Our approach is based on the use of shadow gates, whose task it is to protect …

This article presents an experimental study of single-event transients (SETs) induced by
pulsed X-rays in SiGe heterojunction bipolar transistors (HBTs). Device-level transient data …

The drivers in the extreme environment electronics community are beginning to perk up their
ears to the possibilities of using SiGe technology, especially for space electronics …