In recent years, hole-spin qubits based on semiconductor quantum dots have advanced at a
rapid pace. We first review the main potential advantages of these hole-spin qubits with …

The coherent control of interacting spins in semiconductor quantum dots is of strong interest
for quantum information processing and for studying quantum magnetism from the bottom …

Spin qubits defined by valence band hole states are attractive for quantum information
processing due to their inherent coupling to electric fields, enabling fast and scalable qubit …

A strained Ge quantum well, grown on a SiGe/Si virtual substrate and hosting two
electrostatically defined hole spin qubits, is nondestructively investigated by synchrotron …

Spin qubits in silicon and germanium quantum dots are promising platforms for quantum
computing, but entangling spin qubits over micrometer distances remains a critical …

The co-integration of spin, superconducting, and topological systems is emerging as an
exciting pathway for scalable and high-fidelity quantum information technology. High …

Hole spin qubits in group-IV semiconductors, especially Ge and Si, are actively investigated
as platforms for ultrafast electrical spin manipulation thanks to their strong spin-orbit …

We develop a method to fabricate an undoped Ge quantum well (QW) under a 32 nm
relaxed Si0. 2Ge0. 8 shallow barrier. The bottom barrier contains Si0. 2Ge0. 8 (650° C) and …

Hole-based spin qubits in strained planar germanium quantum wells have received
considerable attention due to their favorable properties and remarkable experimental …

A record‐high mobility of holes, reaching 4.3× 106 cm2 V− 1 s− 1 at 300 mK in an epitaxial
strained germanium (s‐Ge) semiconductor, grown on a standard silicon wafer, is reported …