The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

Abstract (Ga, In) N-based light emitting devices are very efficient in producing blue light and
to a lesser extent green. Extending their spectral range to longer wavelengths while …

The full InGaN structure is used to achieve red light emitting diodes (LEDs). This LED
structure is composed of a partly relaxed InGaN pseudo-substrate fabricated by Soitec …

Nominal InN monolayers grown by molecular beam epitaxy on GaN (0001) are investigated
combining in situ reflection high-energy electron diffraction (RHEED), transmission electron …

Abstract Nitride materials (AlN, GaN, InN and their alloys) are commonly used in
optoelectronics, high-power and high-frequency electronics. Polarity is the essential …

We investigate the structural properties of a series of high alloy content InGaN epilayers
grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature …

A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited for the
fabrication of thin conformal intrawire InGaN nanoshells which host quantum dots in …

Dislocations are one-dimensional topological defects that occur frequently in functional thin
film materials and that are known to degrade the performance of In x Ga1–x N-based …

We experimentally investigate the influence of AlN buffer growth on the nucleation and the
polarity of a self-organized assembly of GaN nanowires (NWs) grown on Si. Two …

Cross-sectional transmission electron microscopy studies often reveal a-type dislocations
located either below or above the interfaces in InGaN/GaN structures deposited along the …