Design and performance analysis of 32× 32 memory array SRAM for low-power applications

X Xue, A Sai Kumar, OI Khalaf, RP Somineni… - Electronics, 2023 - mdpi.com
Computer memory comprises temporarily or permanently stored data and instructions, which
are utilized in electronic digital computers. The opposite of serial access memory is Random …

Analysis of cache (SRAM) memory for core I™ 7 processor

R Agrawal, VK Tomar - 2018 9th international conference on …, 2018 - ieeexplore.ieee.org
This paper presents the implementation of single-bit SRAM cell architecture along with its
peripherals in standard gpdk 90nm technology library using Cadence tool. Different …

Dual mode logic address decoder

L Yavits, R Taco, N Shavit, I Stanger… - 2020 IEEE International …, 2020 - ieeexplore.ieee.org
Address decoders are integral components of random access memories. In higher-
performance computing, the timing of address decoders is often critical, especially in …

Low power consuming 1 KB (32× 32) memory array using compact 7T SRAM cell

S Singh, S Akashe - Wireless Personal Communications, 2017 - Springer
Rapid increase in technology is showing a great perception in assessing the complexity of
design that can be integrated on a single chip dramatically. Minimum feature sizes, low …

A comparative analysis of read/write assist techniques on performance & margin in 6T SRAM cell design

D Suneja, N Chaturvedi… - 2017 International …, 2017 - ieeexplore.ieee.org
With the advent of technology, a change from feature size to nanometer regime resulted in
the scaling of operating voltages and dimensions. Reducing them can greatly boost the …

Low power and noise resistant 16× 16 SRAM array design using CMOS logic and differential sense amplifier

R Bisht, P Aggarwal, P Karki… - … and Automation (ICCCA), 2016 - ieeexplore.ieee.org
The main aim of this paper is to design a low power and noise resistant SRAM using
Cadence (version 6.1. 5) simulation tool. Standard gpdk180 library (ie, 180nm technology …

[PDF][PDF] Design and development of BIST architecture for characterization of S-RAM stability

MK Chaitanya, V Ravi - Indian Journal of Science and Technology, 2016 - researchgate.net
Objectives: The objective is to find the optimum SNM of SRAM and then a BIST architecture
is designed and implemented to test the SRAM cells varying the voltage of the bit lines …

Design implementation of 10T static random access memory cell using stacked transistors for power dissipation reduction

JM Maute, VKJ Puebla, RT Nericua… - 2018 IEEE 10th …, 2018 - ieeexplore.ieee.org
This SRAM cell is composed of combination of normal transistors and high voltage threshold
transistors (sleep transistors) and can store one bit of data. Moreover, the designed SRAM …

Design of low leakage SRAM bit-cell and array

S Ranganath, MS Bhat… - … Conference on Circuits …, 2014 - ieeexplore.ieee.org
There is an ever increasing need for running various multimedia and computer based
applications on a variety of popular digital systems. These applications continue to become …

[PDF][PDF] Design and analysis of 1-Bit SRAM

R Hosamani, A Kalasur, A Bhat - Int J Eng Res Technol (IJERT), 2020 - researchgate.net
SRAM (Static Random-Access Memory) is a memory component and is used in various VLSI
chips due to its unique capability to retain data. This memory cell has become a subject of …