This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The
quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot …

Manipulation of single electrons is the key to developing ultimate electronics such as single-
electron-based information processors and electrical standards in metrology. Especially …

We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane
magnetic field and identify the spin of the lowest three eigenstates in an effective two …

The universality of physical phenomena is a pivotal concept underlying quantum standards.
In this context, the realization of a quantum current standard using silicon single-electron …

Single electron devices (SEDs) afford the opportunity to isolate and manipulate individual
electrons. This ability imbues SEDs with potential applications in a wide array of areas from …

We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures
that are fabricated using a process that facilitates essentially arbitrary gate geometries …

A common observation in metal-based (specifically, those with Al O x tunnel junctions)
single-electron tunneling (SET) devices is a time-dependent instability known as the long …

The atomically precise doping of silicon with phosphorus (Si: P) using scanning tunneling
microscopy (STM) promises ultimate miniaturization of field effect transistors. The one …

We report the fabrication and measurement of one-electron single and double quantum dots
with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron …