The modern power electronics era started with the commercialization of the silicon-
controlled rectifier in 1957, since when power electronics systems have been installed in a …

We review the history and modern state of silicon carbide and SiC-based devices. The main
techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC …

In this paper, ways to create silicon carbide p+-emitters with high injection coefficients are
considered. Raising the emitter doping level, eliminating the deteriorated layer, and making …

For 1-kV 30-A 4H-SiC epitaxial emitter npn bipolar junction transistors, the dependences of
the common-emitter current gain/spl beta//sub CE/on the collector current I/sub C/were …

An analytical model of the switching behavior of SiC diodes is presented. The model gives
an accurate description of the current and voltage transient for a wide range of reverse to …

The hole lifetime τp in the n-base and isothermal (pulse) current–voltage characteristics
have been measured in 4H–SiC diodes with a 10kV blocking voltage (100μm base width) …

Numerical Study of the Turnoff Behavior of High-Voltage 4H-SiC IGBTs Page 1 1928 IEEE
TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 Numerical Study …

An electronic circuit for making accurate open-circuit voltage decay measurements is
presented. The circuit overcomes the main limitations that occur in the standard method …

A computer simulation has been carried out to analyze and explain the specific features of
the switch-on process in super-high-voltage (18 kV class) optically triggered 4H-SiC …

В настоящее время освоение широкозонных материалов: карбида кремния SiC и
нитридов III-й группы—становится одним из главных направлений развития …