Recent advances in Si-compatible nanostructured photodetectors
R Douhan, K Lozovoy, A Kokhanenko, H Deeb, V Dirko… - Technologies, 2023 - mdpi.com
In this review the latest advances in the field of nanostructured photodetectors are
considered, stating the types and materials, and highlighting the features of operation …
considered, stating the types and materials, and highlighting the features of operation …
Photovoltage field-effect transistors
V Adinolfi, EH Sargent - Nature, 2017 - nature.com
The detection of infrared radiation enables night vision, health monitoring, optical
communications and three-dimensional object recognition. Silicon is widely used in modern …
communications and three-dimensional object recognition. Silicon is widely used in modern …
CMOS-integrated optical receivers for on-chip interconnects
This paper reviews recent progress on CMOS-integrated optical receivers for on-chip
interconnects, which have become attractive for achieving communication bandwidth well …
interconnects, which have become attractive for achieving communication bandwidth well …
Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes
We investigated the current–voltage characteristics and responsivity of photodiodes
fabricated with silicon that was microstructured by use of femtosecond-laser pulses in a …
fabricated with silicon that was microstructured by use of femtosecond-laser pulses in a …
Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization
Si modulators and Ge photodetectors are monolithically integrated on Si-on-insulator. The
carrier-depletion-type Si modulators achieved high modulation efficiency and speed (V¿ L …
carrier-depletion-type Si modulators achieved high modulation efficiency and speed (V¿ L …
[图书][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
Nanophotonic integration in state-of-the-art CMOS foundries
JS Orcutt, A Khilo, CW Holzwarth, MA Popović, H Li… - Optics express, 2011 - opg.optica.org
We demonstrate a monolithic photonic integration platform that leverages the existing state-
of-the-art CMOS foundry infrastructure. In our approach, proven XeF_2 post-processing …
of-the-art CMOS foundry infrastructure. In our approach, proven XeF_2 post-processing …
Graphene-Si schottky IR detector
M Amirmazlaghani, F Raissi… - IEEE Journal of …, 2013 - ieeexplore.ieee.org
This paper reports on photodetection properties of the graphene-Si schottky junction by
measuring current–voltage characteristics under 1.55-μ\rmm excitation laser. The …
measuring current–voltage characteristics under 1.55-μ\rmm excitation laser. The …
High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation
OI Dosunmu, DD Cannon, MK Emsley… - IEEE Photonics …, 2004 - ieeexplore.ieee.org
We have designed and fabricated high-speed resonant cavity enhanced germanium (Ge)
Schottky photodetectors on a silicon-on-insulator substrate. These back-illuminated …
Schottky photodetectors on a silicon-on-insulator substrate. These back-illuminated …
Designing chip-level nanophotonic interconnection networks
Technology scaling will soon enable high-performance processors with hundreds of cores
integrated onto a single die, but the success of such systems could be limited by the …
integrated onto a single die, but the success of such systems could be limited by the …