We report room-temperature atomic layer deposition (ALD) of SnO 2 using tetramethyltin
(TMT) as a precursor and plasma-excited humidified argon as an oxidizing gas and …

Nanoscale metallic tunnel junctions are important elements of state-of-the-art technologies
including superconducting qubits, single electronics, nanospintronics, and caloritronics. The …

Nanometer-thick-TiO 2-channel thin-film transistors (TFTs) are examined as oxidizing-agent
monitors for room-temperature atomic layer deposition (RTALD). RTALD is a plasma-based …

The authors present a plasma enhanced room-temperature atomic layer deposition (ALD)
technique for depositing aluminum silicate on TiO 2 photoanodes for dye-sensitized solar …

Room temperature (RT) atomic layer deposition (ALD) of Nb 2 O 5 is developed using (tert-
butylimido) tris (ethylmethylamido) niobium and a plasma excited humidified Ar. To design …

The Internet of Things (IoT) implicates an infrastructure that creates new value by connecting
everything with communication networks, and its construction is rapidly progressing in …

The low temperature deposition of AlN at 160° C is examined by using trimethyl aluminum
(TMA) and NH radicals from plasma excited Ar diluted ammonia. For the deposition, a …

Nano crystalline zinc oxide (ZnO) is deposited by room temperature atomic layer deposition
(RT-ALD) using dimethylzinc and a plasma excited humidified Ar without thermal treatments …

1. 研究背景, 目的電子ビームリソグラフィを用いた金属微小トンネル接合の作製プロセスとして二層
レジスト斜め蒸着法 [1] が一般的に用いられている. この方法では素子のレイアウトの自由度が高く …