Investigation and classification of short-circuit failure modes based on three-dimensional safe operating area for high-power IGBT modules

Y Chen, W Li, F Iannuzzo, H Luo, X He… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Insulated-gate bipolar transistor (IGBT) short-circuit failure modes have been under research
for many years, successfully paving the way for device short-circuit ruggedness …

The influence of the gate driver and common-source inductance on the short-circuit behavior of IGBT modules and protection

X Liu, J Kowalsky, C Herrmann… - IEEE transactions on …, 2020 - ieeexplore.ieee.org
In this article, the influence of the gate drive unit on the short-circuit (SC) type II and III
behavior of insulated gate bipolar transistor (IGBT) modules was investigated in detail. It is …

Unified view on energy and electrical failure of the short-circuit operation of IGBTs

R Baburske, FJ Niedernostheide, HJ Schulze… - Microelectronics …, 2018 - Elsevier
This work investigates the relation of the two destruction modes, the so-called energy
destruction and the electrical destruction, during short-circuit operation of an Insulated Gate …

IGBT field-stop design for good short circuit ruggedness and a better trade-off with respect to static and dynamic switching characteristics

HP Felsl, FJ Niedemostheide… - 2017 29th International …, 2017 - ieeexplore.ieee.org
The doping profile of the field-stop zone influences the static characteristics (V ce, sat, V br)
and the dynamic switching characteristics (di c/dt, dV CE/dt, softness) of IGBTs. Furthermore …

A novel Injection Enhanced Floating Emitter (IEFE) IGBT structure improving the ruggedness against short-circuit and thermal destruction

R Bhojani, J Lutz, R Baburske… - … Devices and IC's …, 2017 - ieeexplore.ieee.org
In this work, we introduce a new collector IGBT structure that shows a huge improvement of
the short-circuit (SC) ruggedness without deteriorating the static and dynamic losses of the …

Short-circuit detection based on gate-emitter voltage of high-voltage IGBTs

J Fuhrmann, D Hammes, P Muenster… - 2017 19th European …, 2017 - ieeexplore.ieee.org
Short-circuit detection is one important feature of a gate-drive unit and a solution without a
collector sense is preferable. With monitoring the gate-emitter voltage, a short can be easily …

Influence of the gate resistance on the short circuit type II & III behavior of IGBT modules and protection

X Liu, J Kowalsky, C Herrmann… - PCIM Europe digital …, 2020 - ieeexplore.ieee.org
The influence of the gate drive unit (GDU) output stage and the gate turn-on resistance on
the short circuit (SC) type II and III behavior of Insulated Gate Bipolar Transistor (IGBT) …

[PDF][PDF] Die Kurzschlüsse von IGBT und Diode im Active-Neutral-Point-Clamped-Dreipunktumrichter

D Hammes - 2021 - rosdok.uni-rostock.de
Am Anfang meiner Laufbahn als wissenschaftlicher Mitarbeiter wurde mir von meinem
Doktorvater die zunächst einfach klingende Aufgabe gestellt, alle denkbaren …

Usability of Three-Level ANPC Converters after Short-Circuit Failure

D Hammes, S Gierschner, N Hammes… - PCIM Europe 2022; …, 2022 - ieeexplore.ieee.org
A short-circuit failure of a semiconductor in a multilevel converter causes challenging
problems. However, the aftermath can also be troublesome. If a primary fault will cause a …

[PDF][PDF] Die Kurzschlüsse von IGBT und Diode im Active-Neutral-Point-Clamped-Dreipunktumrichter

MSD Hammes - researchgate.net
Am Anfang meiner Laufbahn als wissenschaftlicher Mitarbeiter wurde mir von meinem
Doktorvater die zunächst einfach klingende Aufgabe gestellt, alle denkbaren …