SiC and GaN transistors-is there one winner for microwave power applications?
RJ Trew - Proceedings of the IEEE, 2002 - ieeexplore.ieee.org
Wide bandgap semiconductors show promise for high-power microwave electronic devices.
Primarily due to low breakdown voltage, it has not been possible to design and fabricate …
Primarily due to low breakdown voltage, it has not been possible to design and fabricate …
Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources
A Acharyya, JP Banerjee - Applied Nanoscience, 2014 - Springer
In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on
different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz …
different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz …
[HTML][HTML] On impact ionization and avalanche in gallium nitride
D Ji, S Chowdhury - Applied Physics Letters, 2020 - pubs.aip.org
This paper is dedicated to discussing the physics and applications of avalanche on III-
Nitrides, primarily using Gallium Nitride as the example. Understanding the breakdown …
Nitrides, primarily using Gallium Nitride as the example. Understanding the breakdown …
Experimental demonstration of GaN IMPATT diode at X-band
S Kawasaki, Y Ando, M Deki, H Watanabe… - Applied Physics …, 2021 - iopscience.iop.org
We report the first experimental demonstration of microwave oscillation in GaN impact
ionization avalanche time transit (IMPATT) diodes at the X-band. The device used in this …
ionization avalanche time transit (IMPATT) diodes at the X-band. The device used in this …
Shielded gate trench FET with the shield and gate electrodes being connected together
N Kraft, CB Kocon, P Thorup - US Patent 7,319,256, 2008 - Google Patents
(57) ABSTRACT A field effect transistor (FET) includes a plurality of trenches extending into
a semiconductor region. Each trench includes a gate electrode and a shield electrode with …
a semiconductor region. Each trench includes a gate electrode and a shield electrode with …
Potentiality of IMPATT devices as terahertz source: an avalanche response time-based approach to determine the upper cut-off frequency limits
A Acharyya, JP Banerjee - IETE Journal of Research, 2013 - Taylor & Francis
Abstract Potentiality of Impact Avalanche Transit Time (IMPATT) devices based on different
semiconductor materials such as InP, 4H-SiC, and Wurtzite-GaN (Wz-GaN) has been …
semiconductor materials such as InP, 4H-SiC, and Wurtzite-GaN (Wz-GaN) has been …
[HTML][HTML] Enhancement of the performance of GaN IMPATT diodes by negative differential mobility
Y Dai, L Yang, Q Chen, Y Wang, Y Hao - AIP Advances, 2016 - pubs.aip.org
A theoretical analysis of high-efficiency punch-through operation GaN-based terahertz
IMPATT diodes has been carried out in this paper. It is shown that the negative differential …
IMPATT diodes has been carried out in this paper. It is shown that the negative differential …
Prospects of 6H-SiC for operation as an IMPATT diode at 140 GHz
SR Pattanaik, GN Dash, JK Mishra - Semiconductor science and …, 2005 - iopscience.iop.org
The potentials of 6H-SiC are explored for application as a high power IMPATT diode through
computer simulation experiment. It is observed that the new material would far surpass its …
computer simulation experiment. It is observed that the new material would far surpass its …
Si/SiC heterostructure MITATT oscillator for higher-harmonic THz-power generation: theoretical reliability and experimental feasibility studies of quantum modified non …
D Chakraborty, M Mukherjee - Microsystem Technologies, 2020 - Springer
Modelling/simulation and high-frequency characterization of hetero-junction Avalanche
Transit Time (ATT) oscillators, operating in tuned harmonic mode, are reported in the paper …
Transit Time (ATT) oscillators, operating in tuned harmonic mode, are reported in the paper …
Demonstration of GaN impact ionization avalanche transit-time (IMPATT) diode
Wide bandgap semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC),
have bandgap energies larger than 3 eV with high breakdown electric fields, showing the …
have bandgap energies larger than 3 eV with high breakdown electric fields, showing the …