Gallium nitride (GaN) power devices are an emerging technology that have only recently
become available commercially. This new technology enables the design of converters at …

Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and
high power density to power converters due to their excellent performance. However, their …

The double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior
of power devices. Considering the high switching-speed capability of wide band-gap …

A high-power, high-frequency wireless power transfer system for electric vehicles (EVs) is
proposed in this article with lightweight and compact coil design. Leveraging a multilayer …

High bandwidth sensors are required to measure the wide-bandgap devices' transient
behavior because of their fast switching speed. In addition to high bandwidth, the current …

High power density is a desirable feature of power electronics design, which prompts
economic incentives for industrial applications. In this paper, a gallium nitride (GaN)-based 2 …

Gallium nitride (GaN) devices are suitable for high-frequency power converters due to their
excellent switching performance. To maximize the performance of GaN devices, it is …

Conventional di/dt and dv/dt control and gate protection techniques for gallium nitride (GaN)
power transistors usually employ external controllers, isolation circuits, discrete pull-up, and …

Wide-bandgap devices, such as silicon carbide and gallium nitride, have high switching
speed potential. However, the actual speed in practical application is limited by circuit …

EV chargers with output power levels in the range of tens of kW are typically employing a
front-end three-phase boost-type PFC rectifier stage for sinusoidal input current and DC-link …