Volatile and nonvolatile memristive devices for neuromorphic computing

G Zhou, Z Wang, B Sun, F Zhou, L Sun… - Advanced Electronic …, 2022 - Wiley Online Library
Ion migration as well as electron transfer and coupling in resistive switching materials
endow memristors with a physically tunable conductance to resemble synapses, neurons …

Evolution from lead‐based to lead‐free piezoelectrics: engineering of lattices, domains, boundaries, and defects leading to giant response

M Waqar, H Wu, J Chen, K Yao, J Wang - Advanced Materials, 2022 - Wiley Online Library
Piezoelectric materials are known to mankind for more than a century, with numerous
advancements made in both scientific understandings and practical applications. In the last …

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

Y Cheng, Z Gao, KH Ye, HW Park, Y Zheng… - Nature …, 2022 - nature.com
Atomic-resolution Cs-corrected scanning transmission electron microscopy revealed local
shifting of two oxygen positions (OI and OII) within the unit cells of a ferroelectric (Hf0. 5Zr0 …

Controllable electrical, magnetoelectric and optical properties of BiFeO3 via domain engineering

Y Liu, Y Wang, J Ma, S Li, H Pan, CW Nan… - Progress in Materials …, 2022 - Elsevier
Abstract Bismuth ferrite (BiFeO 3, BFO) as one of the few single-phase room-temperature
multiferroics, has aroused ever-increasing enthusiasm in research communities during the …

Dislocation-induced stop-and-go kinetics of interfacial transformations

X Sun, D Wu, L Zou, SD House, X Chen, M Li… - Nature, 2022 - nature.com
Most engineering materials are based on multiphase microstructures produced either
through the control of phase equilibria or by the fabrication of different materials as in thin …

Integrated memory devices based on 2D materials

F Xue, C Zhang, Y Ma, Y Wen, X He, B Yu… - Advanced …, 2022 - Wiley Online Library
With the advent of the Internet of Things and big data, massive data must be rapidly
processed and stored within a short timeframe. This imposes stringent requirements on …

Atomic-scale polarization switching in wurtzite ferroelectrics

S Calderon, J Hayden, SM Baksa, W Tzou… - Science, 2023 - science.org
Ferroelectric wurtzites have the potential to revolutionize modern microelectronics because
they are easily integrated with multiple mainstream semiconductor platforms. However, the …

[HTML][HTML] Ferroelectric polycrystals: Structural and microstructural levers for property-engineering via domain-wall dynamics

J Schultheiß, G Picht, J Wang, YA Genenko… - Progress In Materials …, 2023 - Elsevier
Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and
can be reversed by an externally-applied field. This high versatility makes them useful in …

Deep learning of accurate force field of ferroelectric

J Wu, Y Zhang, L Zhang, S Liu - Physical Review B, 2021 - APS
The discovery of ferroelectricity in HfO 2-based thin films opens up new opportunities for
using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density …

Nonvolatile ferroelectric‐domain‐wall memory embedded in a complex topological domain structure

W Yang, G Tian, H Fan, Y Zhao, H Chen… - Advanced …, 2022 - Wiley Online Library
The discovery and precise manipulation of atomic‐size conductive ferroelectric domain
walls offers new opportunities for a wide range of prospective electronic devices, and the …