This paper reviews a particular form of pulsed‐laser‐based thin‐film crystallization method
referred to as controlled super‐lateral growth (C‐SLG). By systematically manipulating and …

LIQUID CRYSTAL DISPLAYS THE NEW EDITION OF THE GOLD-STANDARD IN
TEACHING AND REFERENCING THE FUNDAMENTALS OF LCD TECHNOLOGIES This …

Nonhydrogenated, n-channel, low-temperature-processed, single-crystal Si thin-film
transistors (TFTs) have been fabricated on Si thin films prepared via sequential lateral …

Amorphous silicon a-Si was crystallized by femtosecond laser annealing (FLA) using a near-
infrared 800 nm ultrafast Ti: sapphire laser system. The intense ultrashort laser pulses lead …

Single-crystal thin-film transistors on nonrefractory materials such as glass can be realized if
monocrystalline islands of sufficient sizes can be grown at a predetermined position. By …

We present device results from polysilicon thin film transistors (TFTs) fabricated at a
maximum temperature of 100° C on polyester substrates. Critical to our success has been …

Excimer laser crystallization is used to produce layered nanocrystalline silicon from
hydrogenated amorphous silicon, using a partial melting process. Three types of …

Excimer laser crystallization of amorphous silicon has been extensively studied for
electronic applications. Most of the early works has been on thin film transistor fabrication …

Selective laser annealing system was developed to realize fabrications of low-temperature
poly-Si thin-film transistors (TFTs) even for large substrate, while the conventional excimer …

We report results on thin-film transistors (TFTs) made from a new hybrid process in which
amorphous silicon (a-Si) is first converted to polycrystalline silicon (poly-Si) using Ni-metal …