Silicon quantum electronics
This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …
[图书][B] Computational Electronics: semiclassical and quantum device modeling and simulation
Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …
Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
Although silicon is a promising material for quantum computation, the degeneracy of the
conduction band minima (valleys) must be lifted with a splitting sufficient to ensure the …
conduction band minima (valleys) must be lifted with a splitting sufficient to ensure the …
Ohm's law survives to the atomic scale
Wiring Up Silicon Surfaces One of the challenges in downsizing electronic circuits is
maintaining low resistivity of wires, because shrinking their diameter to near atomic …
maintaining low resistivity of wires, because shrinking their diameter to near atomic …
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …
Electrically controlling single-spin qubits in a continuous microwave field
Large-scale quantum computers must be built upon quantum bits that are both highly
coherent and locally controllable. We demonstrate the quantum control of the electron and …
coherent and locally controllable. We demonstrate the quantum control of the electron and …
NEMO5: A parallel multiscale nanoelectronics modeling tool
S Steiger, M Povolotskyi, HH Park… - IEEE Transactions …, 2011 - ieeexplore.ieee.org
The development of a new nanoelectronics modeling tool, NEMO5, is reported. The tool
computes strain, phonon spectra, electronic band structure, charge density, charge current …
computes strain, phonon spectra, electronic band structure, charge density, charge current …
Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys
We discuss a model for the onsite matrix elements of the sp 3 d 5 s∗ tight-binding
Hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model …
Hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model …
Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides
We present a theory of local electric polarization in crystalline solids and apply it to study the
case of wurtzite group-III nitrides. We show that a local value of the electric polarization …
case of wurtzite group-III nitrides. We show that a local value of the electric polarization …
Practical strategies for enhancing the valley splitting in Si/SiGe quantum wells
Silicon/silicon-germanium heterostructures have many important advantages for hosting
spin qubits. However, controlling the valley splitting (the energy splitting between the two …
spin qubits. However, controlling the valley splitting (the energy splitting between the two …