Analysis of the impact of process variations and manufacturing defects on the performance of carbon-nanotube FETs
S Banerjee, A Chaudhuri… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Carbon-nanotube FETs (CNFETs) are potential successors to CMOS transistors; these
emerging devices have a low intrinsic delay due to near-ballistic transport in carbon …
emerging devices have a low intrinsic delay due to near-ballistic transport in carbon …
Current scaling in aligned carbon nanotube array transistors with local bottom gating
AD Franklin, A Lin, HSP Wong… - IEEE Electron Device …, 2010 - ieeexplore.ieee.org
A local-bottom-gate (LBG) configuration is introduced for carbon nanotube array field-effect
transistors (FETs)(CNTFETs). CNTFETs from highly aligned nanotubes are demonstrated …
transistors (FETs)(CNTFETs). CNTFETs from highly aligned nanotubes are demonstrated …
Digital VLSI logic technology using carbon nanotube FETs: Frequently asked questions
Carbon Nanotube Field-Effect Transistors (CNFETs) show promise as extensions to silicon-
CMOS. Ideal CNFET circuits can potentially provide 20X Energy-Delay-Product benefits …
CMOS. Ideal CNFET circuits can potentially provide 20X Energy-Delay-Product benefits …
ACCNT—A metallic-CNT-tolerant design methodology for carbon-nanotube VLSI: Concepts and experimental demonstration
We demonstrate ACCNT (pronounced as ldquoaccentrdquo), a solution to the metallic-
nanotube problem that does not require any metallic-nanotube removal of any kind. ACCNT …
nanotube problem that does not require any metallic-nanotube removal of any kind. ACCNT …
Carbon nanotube SRAM design with metallic CNT or removed metallic CNT tolerant approaches
Z Zhang, JG Delgado-Frias - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
A study of an eight-transistor static random access memory (SRAM) cell and its
implementation in carbon nanotube FET (CNTFET) technology are presented. Simulations …
implementation in carbon nanotube FET (CNTFET) technology are presented. Simulations …
Design of an ultralow power CNTFET based 9T SRAM with shared BL and half select free techniques
In this paper, we propose a new design of high‐performance ultralow power carbon
nanotube field effect transistor (CNTFET)‐based nine‐transistor static random access …
nanotube field effect transistor (CNTFET)‐based nine‐transistor static random access …
Low power SRAM cell design for FinFET and CNTFET technologies
JG Delgado-Frias, Z Zhang… - … Conference on Green …, 2010 - ieeexplore.ieee.org
Implementations of SRAM cells in FinFET and carbon nanotube FET (CNTFET) technologies
are presented in this paper. The International Technology Roadmap for Semiconductors has …
are presented in this paper. The International Technology Roadmap for Semiconductors has …
Variation-aware delay fault testing for carbon-nanotube FET circuits
Sensitivity to process variations and manufacturing defects are major showstoppers for the
high-volume manufacturing of carbon nanotube field-effect transistors (CNFETs). These …
high-volume manufacturing of carbon nanotube field-effect transistors (CNFETs). These …
ACCNT: A metallic-CNT-tolerant design methodology for carbon nanotube VLSI: Analyses and design guidelines
We present analyses for ACCNT (pronounced as “accent”), which is a solution to the metallic-
nanotube problem that does not require any metallic-nanotube removal of any kind. ACCNT …
nanotube problem that does not require any metallic-nanotube removal of any kind. ACCNT …
Functional yield estimation of carbon nanotube-based logic gates in the presence of defects
R Ashraf, M Chrzanowska-Jeske… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
Carbon nanotube field-effect transistor (CNFET) is one of the most promising candidates for
a building block of post silicon era integrated circuits. One of the major challenges faced by …
a building block of post silicon era integrated circuits. One of the major challenges faced by …