For the interlayer dielectric in microelectronics, light element compounds are preferably
accepted due to less electronic polarization. Here, the nontrivial dielectric nature of the …

Critical properties of porous periodic mesoporous silica (PMO) low-k dielectric with a
different ratio of benzene bridges and methyl terminal groups are studied by using various …

In this work x-ray photoelectron spectroscopy is used to investigate in-vacuo, the interaction
of metallic manganese with a (3-trimethoxysilylpropyl) diethylenetriamine (DETA) self …

Organosilicate-glass-based low-κ films containing both terminal methyl groups and an
ethylene bridge between the silicon atoms are spin-on deposited by using 1, 2-bis …

An analytical approach allowing to analyze effect of porosity, pore size, and interconnectivity
on dielectric constant of organosilicate based low-k materials is developed. Within the …

Modification of spin-on-deposited porous PMO (periodic mesoporous organosilica) ultralow-
k (ULK) SiCOH films (k= 2.33) containing both methyl terminal and methylene bridging …

The process of the physical sputtering of the (001) surface of continuous and nanoporous
crystalline silicon by 100-and 200-eV Ar ions is simulated using the molecular dynamics …

Eu-doped periodic mesoporous organosilicate (PMO) films with terminal methyl and
ethylene bridging groups have been synthesized using sol-gel technology and spin-coating …

A new binary collision approach for the calculation of the sputtering yield of Si under
nonreactive ionic bombardment by Ar+ is presented for the energy range from threshold to …

PECVD deposited porous SiCOH with ultralow dielectric constant has been successfully
integrated as the insulator in advanced interconnects to decrease the RC delay. The effects …