High‐Stability van Der Waals Structures of GeTe/Sb2Te3 Superlattices for 100× Increased Durability Phase‐Change Memory (PCM) by Low‐Temperature Atomic …
RJ Zhu, RZ Zhao, K Gao, ZR Zhang… - Advanced Functional …, 2024 - Wiley Online Library
The superlattices phase‐change memory (SL‐PCM), based on GeTe/Sb2Te3 superlattices
(SLs), garners considerable attention within the academic community owing to its …
(SLs), garners considerable attention within the academic community owing to its …
Advanced interfacial phase change material: Structurally confined and interfacially extended superlattice
Abstract Interfacial Phase Change Memory (iPCM) retrench unnecessary power
consumption due to wasted heat generated during phase change by reducing unnecessary …
consumption due to wasted heat generated during phase change by reducing unnecessary …
Simultaneously higher thermal stability and lower resistance drifting for Sb/In 48.9 Sb 15.5 Te 35.6 nanocomposite multilayer films
S Gao, Y Hu - CrystEngComm, 2022 - pubs.rsc.org
In this study, In48. 9Sb15. 5Te35. 6 (IST) was introduced as a stable interlayer to improve
the weak amorphous thermal stability and large resistance drift of Sb films. The results …
the weak amorphous thermal stability and large resistance drift of Sb films. The results …
Ag rearrangement induced metal-insulator phase transition in thermoelectric MgAgSb
In recent years, materials with metal-to-insulator phase transitions have attracted great
attention due to their property variations before and after the transition. As nearly all good …
attention due to their property variations before and after the transition. As nearly all good …
First-principles calculations to investigate electronic, optical and thermoelectrical performances of Pb/Te-based nanolayer and bulk chalcogenides
K Rajabi, H Tashakori, E Pakizeh… - International Journal of …, 2024 - oiccpress.com
The electronic, thermoelectricand optical properties of bulk and nanolayers chalcogenides,
specifically XTe (X= Si, Ge, Sn, and Pb) and PbY (Y= O, S, Se, and Te), have been …
specifically XTe (X= Si, Ge, Sn, and Pb) and PbY (Y= O, S, Se, and Te), have been …
Vetri calcogenuri per applicazioni di commutazione di memorie con particolare riguardo agli aspetti di modellazione e simulazioni
B Dianat - 2021 - iris.unimore.it
In this work, we initially investigate the defect and material characterization of La2O3 and
CeO2 high-k dielectric constant materials as gate oxide materials in MOSFETs. We present …
CeO2 high-k dielectric constant materials as gate oxide materials in MOSFETs. We present …