Boosts charge utilization and enables high performance organic solar cells by marco-and micro-synergistic method
A ternary solar cell is a typical strategy that can well compensate light absorption and
effectively regulate energy levels and the morphology of active layers. However, the …
effectively regulate energy levels and the morphology of active layers. However, the …
Efficient Avalanche Photodiodes with a WSe2/MoS2 Heterostructure via Two-Photon Absorption
Two-dimensional (2D) materials-based photodetectors in the infrared range hold the key to
enabling a wide range of optoelectronics applications including infrared imaging and optical …
enabling a wide range of optoelectronics applications including infrared imaging and optical …
Dark Current Analysis on GeSn pin Photodetectors
Group IV alloys of GeSn have been extensively investigated as a competing material
alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect …
alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect …
Extended-SWIR GeSn LEDs with reduced footprint and efficient operation power
Complementary metal oxide semiconductor-compatible short-and midwave infrared emitters
are highly coveted for the monolithic integration of silicon-based photonic and electronic …
are highly coveted for the monolithic integration of silicon-based photonic and electronic …
Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection
Y Zhu, T Yang, H Ding, G Lin, C Li, W Huang… - Applied Surface …, 2024 - Elsevier
Multispectral photodetectors (PDs) operating in visible (VIS) to shortwave infrared (SWIR)
wavelength ranges are highly desired for various civil and military applications. Traditional …
wavelength ranges are highly desired for various civil and military applications. Traditional …
High performance pin photodetectors on Ge-on-insulator platform
X Zhao, G Wang, H Lin, Y Du, X Luo, Z Kong, J Su, J Li… - Nanomaterials, 2021 - mdpi.com
In this article, we demonstrated novel methods to improve the performance of pin
photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a …
photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a …
High speed and ultra-low dark current Ge vertical pin photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Germanium (Ge) vertical pin photodetectors were demonstrated with an ultra-low dark
current of 0.57 mA/cm^ 2 at− 1 V. A germanium-on-insulator (GOI) platform with a 200-mm …
current of 0.57 mA/cm^ 2 at− 1 V. A germanium-on-insulator (GOI) platform with a 200-mm …
[HTML][HTML] Defects in Ge and GeSn and their impact on optoelectronic properties
A Giunto, A Fontcuberta i Morral - Applied Physics Reviews, 2024 - pubs.aip.org
GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …
Dark current in monolithic extended-SWIR GeSn PIN photodetectors
Monolithic integration of extended short-wave infrared photodetectors (PDs) on silicon is
highly sought-after to implement manufacturable, cost-effective sensing and imaging …
highly sought-after to implement manufacturable, cost-effective sensing and imaging …
Ultrahigh-Quality Ge-on-Glass with a 3.7% Uniaxial Tensile Strain
While there have been notable advancements in the quality of epitaxial Ge on Si, the crystal
quality of bulk Ge remains much superior, which provides an effective method to study the …
quality of bulk Ge remains much superior, which provides an effective method to study the …