A concept that could provide a thin monocrystalline-silicon absorber layer without resorting
to the expensive step of epitaxy would be very appealing for reducing the cost of solar cells …

Recent experiments on the UV and electron beam irradiation of solid O2 reveals a series of
IR features near the valence antisymmetric vibration band of O3 which are frequently …

Sublimation and O2 etching kinetics for a series of individual silicon (Si) nanoparticles (NPs)
were studied for NP temperatures (T NP) from 1200 to 2050 K using a single NP mass …

High frequency and high quality factor, Q,(defined as a half-width of the resonant peak) are
the key factors that determine applications of microelectromechanical (MEMS) oscillators for …

Combining classical molecular dynamics simulations with high level, multiconfigurational ab
initio calculations, we demonstrate that even relatively mild collisions between ground state …

The characteristics of silicon oxynitride (SiON) films grown using neutral-beam and typical
plasma-enhanced chemical vapor deposition methods are compared. Neutral-beam and …

Size distributions through large van der Waals cluster beam cross-section are studied with
the pick-up technique. Based on our experimental results, we observed that the larger …

Accepted February, 7, 2009) The characteristics of a cluster beam interaction with a solid
target are reviewed from the viewpoint of computer simulation. The similarity and …

We present the study of high temperature (800–1250° C) oxidation of Si (100) by large
neutral oxygen clusters (600 and 4000 molecules per cluster). The coexistence of passive …