Electrochemical impedance spectroscopy analysis of porous silicon prepared by photo-electrochemical etching: current density effect

FS Husairi, J Rouhi, KA Eswar, AZ Zainurul, M Rusop… - Applied Physics A, 2014 - Springer
Electrical impedance characteristics of porous silicon nanostructures (PSiNs) in frequency
function were studied. PSiNs were prepared through photo-electrochemical etching method …

Porosity and thickness effect of porous silicon layer on photoluminescence spectra

FS Husairi, KA Eswar, M Guliling, Z Khusaimi… - AIP Conference …, 2018 - pubs.aip.org
The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon
wafer. Porous silicon prepared by using different current density and fix etching time with …

Porosity and thickness effect of porous silicon layer on photoluminescence spectra

MHF Suhaimi, M Rusop… - 2013 International …, 2013 - ieeexplore.ieee.org
The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon
wafer. Porous silicon prepared by using different current density and fix etching time with …

The fabrication of nitrogen detector porous silicon nanostructures

FS Husairi, N Othman, KA Eswar, M Guliling… - AIP Conference …, 2018 - pubs.aip.org
In this study the porous silicon nanostructure used as a the nitrogen detector was fabricated
by using anodization method because of simple and easy to handle. This method using 20 …