Electrochemical impedance spectroscopy analysis of porous silicon prepared by photo-electrochemical etching: current density effect
Electrical impedance characteristics of porous silicon nanostructures (PSiNs) in frequency
function were studied. PSiNs were prepared through photo-electrochemical etching method …
function were studied. PSiNs were prepared through photo-electrochemical etching method …
Porosity and thickness effect of porous silicon layer on photoluminescence spectra
The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon
wafer. Porous silicon prepared by using different current density and fix etching time with …
wafer. Porous silicon prepared by using different current density and fix etching time with …
Porosity and thickness effect of porous silicon layer on photoluminescence spectra
MHF Suhaimi, M Rusop… - 2013 International …, 2013 - ieeexplore.ieee.org
The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon
wafer. Porous silicon prepared by using different current density and fix etching time with …
wafer. Porous silicon prepared by using different current density and fix etching time with …
The fabrication of nitrogen detector porous silicon nanostructures
In this study the porous silicon nanostructure used as a the nitrogen detector was fabricated
by using anodization method because of simple and easy to handle. This method using 20 …
by using anodization method because of simple and easy to handle. This method using 20 …