Benchmarking monolayer MoS2 and WS2 field-effect transistors
Here we benchmark device-to-device variation in field-effect transistors (FETs) based on
monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition …
monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition …
Functional devices from bottom-up Silicon nanowires: A review
This paper summarizes some of the essential aspects for the fabrication of functional
devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting …
devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting …
Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET
This paper critically investigates the effect of doping on different device characteristics of a
Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The …
Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The …
Current status of reliability in extended and beyond CMOS devices
AE Islam - IEEE Transactions on Device and Materials …, 2014 - ieeexplore.ieee.org
In the history of electronics, solid-state materials replaced the vacuum parts to reduce power
consumption and to obtain better reliability at a reduced cost. The size of solid-state …
consumption and to obtain better reliability at a reduced cost. The size of solid-state …
Improvement in self-heating characteristic by incorporating hetero-gate-dielectric in gate-all-around MOSFETs
For improving self-heating effects (SHEs) in gate-all-around metal-oxide-semiconductor field-
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …
Performance Potential and Limit of MoS2 Transistors
DOI: 10.1002/adma. 201405068 and measured by atomic force microscopy (AFM) as shown
in Figure 1 b, c, the thickness of which is around 6 nm, corresponding to about 9 layers …
in Figure 1 b, c, the thickness of which is around 6 nm, corresponding to about 9 layers …
Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs
Gate-all-around (GAA) MOSFETs use multiple nanowires (NWs) to achieve target, along
with excellent 3-D electrostatic control of the channel. Although the self-heating effect has …
with excellent 3-D electrostatic control of the channel. Although the self-heating effect has …
Low-frequency noise and random telegraph noise on near-ballistic III-V MOSFETs
In this paper, we report the observation of random telegraph noise (RTN) in highly scaled
InGaAs gate-all-around (GAA) MOSFETs fabricated by a top-down approach. RTN and low …
InGaAs gate-all-around (GAA) MOSFETs fabricated by a top-down approach. RTN and low …
Investigation of self-heating effects in gate-all-around MOSFETs with vertically stacked multiple silicon nanowire channels
The self-heating effects (SHEs) in gate-all-around (GAA) MOSFETs with vertically stacked
silicon nanowire (SiNW) channels are investigated. Direct observations using thermal …
silicon nanowire (SiNW) channels are investigated. Direct observations using thermal …
Characterization of self-heating leads to universal scaling of HCI degradation of multi-fin SOI FinFETs
SOI FinFETs and other Gate-all-around (GAA) transistors topologies have excellent 3-D
electrostatic control and therefore, have been suggested as potential technology options for …
electrostatic control and therefore, have been suggested as potential technology options for …