Graphene has attracted tremendous interest due to its unique physical and chemical
properties. The atomic thickness, high carrier mobility and transparency make graphene an …

Metallic nanostructures play a vital role in the nanoscale engineering of flexible
optoelectronic devices as active units. Due to the limited flexibility properties of …

GaN-based semiconductors are of great technological importance for the fabrication of
optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further …

Optical stimulation and imaging of neurons deep in the brain require implantable optical
neural probes. External optical access to deeper regions of the brain is limited by scattering …

Sputter-deposited indium–tin oxide (ITO) electrodes became ohmic contacts for
unintentionally doped β-Ga 2 O 3 (010) substrates with a carrier concentration of 2× 10 17 …

Abstract Transistor-based on Gallium Nitride (GaN) technology, has enabled energy-saving
power electronics to alleviate global energy utilization. Being the initial stages of the …

Abstract Transparent conductive Ga-doped ZnO (ZnO: Ga) was fabricated to serve as p-
contacts of InGaN-based light-emitting diodes (LEDs) using molecular-beam epitaxy. As …

We report on the vertically stacked color tunable light-emitting diodes (LEDs) fabricated
using wafer bonding with an indium tin oxide (ITO) layer and transfer printing by the laser lift …

We demonstrate the use of graphene based transparent sheets as a p-type current
spreading layer in GaN light emitting diodes (LEDs). Very thin Ni/Au was inserted between …

Vertical GaN-based light-emitting diodes (LEDs) were fabricated using a laser-liftoff process
and the effect of the cathode processing conditions on the properties of the LEDs was …