This study aims to improve the crystalline quality of 650-nm GaIn 0.17 N/GaIn 0.38 N red-
emitting multiple quantum wells (MQWs) fabricated on a ScAlMgO 4 (SCAM) substrate …

We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-
phase epitaxy on a ScAlMgO 4 (0001)(SAM) substrate without a low-temperature buffer …

Single crystal growth of ScAlMgO 4 boules with 10 mm up to 4 in.(ca 101.6 mm) in diameter
by Czochralski technique was demonstrated. Some high quality ScAlMgO 4 single crystal …

ScAlMgO 4 (SAM) has attracted attention as a substrate for nitride semiconductor crystal
growth owing to its small a-axis lattice mismatch with GaN and InGaN. In this study, we …

A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an
epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off …

ScAlMgO4 (SAM) substrates have attracted considerable attention as platforms for GaN
growth in recent years because GaN can be grown directly on SAM without any buffer layer …

ScAlMgO 4 (SCAM) substrates with a small lattice-mismatch to GaN and c-plane cleavability
are promising for fabricating high-quality free-standing GaN wafers. To reduce the cost in the …

X-ray photoelectron spectroscopy (XPS) of electronic structure and surface states of GaN
epitaxial films grown on Al 2 O 3 and SiC substrates established the presence of only traces …

SCAM has been expected to be a suitable substrate for GaN blue-light-emitting-diodes
(LEDs) and high-power high electron mobility transistors (HEMTs) because of its lower …

Vertical graphene (VG) combines the excellent properties of conventional graphene with a
unique vertical nanosheet structure, and has shown tremendous promise in the field of …