J Okuno, T Kunihiro, K Konishi, Y Shuto… - IEEE Journal of the …, 2022 - ieeexplore.ieee.org
We have reported that film thickness scaling of ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) allows
hafnium-based one-transistor and one-capacitor (1T1C) ferroelectric random-access …