Tunable Localized Charge Transfer Excitons in Nanoplatelet–2D Chalcogenide van der Waals Heterostructures
Observation of interlayer, charge transfer (CT) excitons in van der Waals heterostructures
(vdWHs) based on 2D–2D systems has been well investigated. While conceptually …
(vdWHs) based on 2D–2D systems has been well investigated. While conceptually …
Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells
AA Roble, SK Patra, F Massabuau, M Frentrup… - Scientific Reports, 2019 - nature.com
We report on a combined theoretical and experimental study of the impact of alloy
fluctuations and Coulomb effects on the electronic and optical properties of c-plane …
fluctuations and Coulomb effects on the electronic and optical properties of c-plane …
GaN nanorods grown on Si (111) substrates and exciton localization
We have investigated exciton localization in binary GaN nanorods using micro-and time-
resolved photoluminescence measurements. The temperature dependence of the …
resolved photoluminescence measurements. The temperature dependence of the …
Two-dimensional correlation analysis of the time-resolved photoluminescence spectra of gallium nitride nanowires
Principal component analysis based two-dimensional (PCA2D) correlation spectroscopy
combined with the eigenvalue manipulating transformation (EMT) technique by lowering the …
combined with the eigenvalue manipulating transformation (EMT) technique by lowering the …
Correlation between carrier localization, optical, and structural properties in multilayered GaN/Al0. 5Ga0. 5N quantum wells with an ultrathin inserted Al0. 5Ga0. 5N …
YS Park, Y Kim, H Im - Journal of Applied Physics, 2010 - pubs.aip.org
We report that the performance of the optical properties in multilayered GaN/Al 0.5 Ga 0.5 N
quantum wells is improved by inserting an ultrathin (5 Å) Al 0.5 Ga 0.5 N layer in the middle …
quantum wells is improved by inserting an ultrathin (5 Å) Al 0.5 Ga 0.5 N layer in the middle …
Dynamical study of the radiative recombination processes in GaN/AlGaN QWs
M Sabooni, M Esmaeili, H Haratizadeh… - Journal of Materials …, 2008 - Springer
The effects of the Si doping level on the recombination dynamics and carrier (exciton)
localization in modulation-doped GaN/Al 0.07 Ga 0.93 N multiple-quantum-well (MQW) …
localization in modulation-doped GaN/Al 0.07 Ga 0.93 N multiple-quantum-well (MQW) …