(57) ABSTRACT A three-dimensional integrated circuit non-volatile memory array includes a
memory array of vertical channel NAND flash strings connected between a substrate Source …

According to one embodiment, a semiconductor memory device includes a stacked body, a
semiconductor pillar, and a plurality of memory cells. The stacked body includes a plurality …

According to one embodiment, a semiconductor memory device includes a stacked body
including a plurality of electrode layers and a plurality of inter-layer insulating layers each …

(57) ABSTRACT A highly integrated semiconductor device is provided. The semiconductor
device includes a Substrate, a prism-like insulator, a memory cell string including a plurality …

A flash device comprising a well and a U-shaped flash cell string, the U-shaped flash cell
string built directly on a substrate adjacent the well. The U-shaped flash cell string comprises …

(57) ABSTRACT A method of forming a memory device including a plurality of nonvolatile
memory cells is provided. The method includes forming a hole in a stack of alternating …

There is provided a method of manufacturing a non-volatile memory device including:
alternatively stacking a plurality of insulating layers and a plurality of conductive layers on a …

According to example embodiments, a semiconductor device includes horizontal patterns
stacked on a substrate. The horizontal patterns define an opening through the horizontal …

A semiconductor memory device includes a memory string including memory cells formed
by word lines covering a vertical semiconductor layer on a semiconductor substrate at …

Some embodiments include a memory cell having a non-ohmic device between a transistor
source/drain region and a capacitor. Some embodiments include a memory cell having a …