The terahertz (THz) quantum cascade laser (QCL), first demonstrated in 2002, is among the
most promising radiation sources in the THz region owing to its high output power and broad …

n-type Ge/SiGe terahertz quantum cascade lasers are investigated using non-equilibrium
Green's functions calculations. We compare the temperature dependence of the terahertz …

Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over
existing III-V devices. Although coherent electron transport effects are known to be important …

Silicon-based lasers have long been sought, since they will permit monolithic integration of
photonics with high-speed silicon electronics and thereby significantly broaden the reach of …

Silicon-based quantum cascade lasers (QCLs) offer the prospect of integrating coherent
terahertz (THz) radiation sources with silicon microelectronics. Theoretical studies have …

Terahertz (THz) quantum cascade lasers (QCLs) are technologically important laser sources
for the THz range but are complex to model. An efficient extended rate equation model is …

In this paper, we have experimentally and numerically studied the nonradiative
intersubband (ISB) relaxation in n-type Ge/SiGe quantum well (QW) systems. Relaxation …

We investigate intervalley splitting in the conduction band of strained [001]-Ge quantum well
(QW) systems with finite SiGe alloy barriers by means of asp 3 d 5 s∗ tight-binding …

n-type doped Ge quantum wells with SiGe barriers represent a promising heterostructure
system for the development of radiation emitters in the terahertz range such as electrically …

As semiconductor devices, the terahertz quantum-cascade laser is a coherent source based
on intersubband transitions of unipolar carriers while the terahertz quantum-well …