The remote sensing and satellite community working for space organizations have
expressed interest in building advanced devices with potential choices for Gallium Nitride …

This paper presents an extensive Victory TCAD based assessment to evaluate the device
performance under heavy ion particle strike induced single event effects (SEEs). The impact …

Temperature-dependent electrical characteristics were explicitly investigated for a 400-μm
diameter neutron-irradiated (NI) GaN Schottky barrier diode (SBD). Based on CV …

In this Letter, the degradation mechanism of Schottky p-type GaN (P-GaN) gate stack in GaN
power devices under neutron irradiation is studied. After 1-MeV neutron irradiation at …

GaN power device lifetime degradation caused by neutron irradiation is reported. Hundreds
of devices were stressed in off-state with various drain voltages from 75 V to 400 V while …

The defect-curing effects of fast neutrons have been studied using single-crystalline GaN
samples irradiated under four different neutron fluences. The conditions of each neutron …

Rapidly expanding, new telecommunications infrastructure based on 5G technologies will
disrupt and transform how we design, build, operate, and optimize scientific infrastructure …

在高频, 大功率, 高温, 高压等领域, 氮化镓高电子迁移率晶体管(HEMT) 器件因其优异的耐辐射
性能而被广泛地应用于卫星, 太空探测, 核反应堆等领域. 尽管从理论和一些试验研究中可以得知 …

This paper investigates the design requirements for GaN power devices and digital DC/DC
power supply for space power applications, including blocking voltage level, heat …

Power electronic components operating in radiation environments are exposed to different
types of radiation effects such as single event, ionizing dose and displacement damage …