Transport losses at the TCO/a-Si: H/c-Si heterojunction: Influence of different layers and annealing
To improve silicon heterojunction solar cells even further, minimizing transport losses within
the charge carrier selective junctions and layers is mandatory. With this in mind, we present …
the charge carrier selective junctions and layers is mandatory. With this in mind, we present …
Influence of TCO and a-Si: H doping on SHJ contact resistivity
Resistive losses in silicon heterojunction (SHJ) solar cells are partly linked to transport
barriers at the amorphous silicon/crystalline silicon (a-Si: H/c-Si) and transparent conductive …
barriers at the amorphous silicon/crystalline silicon (a-Si: H/c-Si) and transparent conductive …
[HTML][HTML] Implementing transparent conducting oxides by DC sputtering on ultrathin SiOx/poly-Si passivating contacts
This work addresses the development of transparent conductive oxides (TCOs) for Si solar
cells featuring SiO x/poly-Si based passivating contacts. Minimizing the thickness of the …
cells featuring SiO x/poly-Si based passivating contacts. Minimizing the thickness of the …
Influence of interfacial oxides at TCO/doped Si thin film contacts on the charge carrier transport of passivating contacts
C Messmer, M Bivour, C Luderer… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
Minimizing transport losses in novel solar cell concepts is often linked to improvements at
the transparent conductive oxide (TCO)/doped silicon contact. A detailed understanding of …
the transparent conductive oxide (TCO)/doped silicon contact. A detailed understanding of …
Unveiling the hybrid n-Si/PEDOT: PSS interface
S Jäckle, M Liebhaber, J Niederhausen… - … applied materials & …, 2016 - ACS Publications
We investigated the buried interface between monocrystalline n-type silicon (n-Si) and the
highly conductive polymer poly (3, 4-ethylenedioxythiophene)-poly (styrenesulfonate) …
highly conductive polymer poly (3, 4-ethylenedioxythiophene)-poly (styrenesulfonate) …
Bathocuproine: Ag complex functionalized tunneling junction for efficient monolithic perovskite/TOPCon silicon tandem solar cell
Z Ying, X Yang, J Zheng, J Sun, J Xiu, Y Zhu… - Solar …, 2022 - Wiley Online Library
The single‐crystalline silicon solar cell with tunnel oxide passivating poly‐Si contact
(TOPCon) has developed into one of the most promising and high‐performance n‐type Si …
(TOPCon) has developed into one of the most promising and high‐performance n‐type Si …
Optoelectronic performances on different structures of Al‐doped ZnO
Z Liu, P Yang - Journal of the American Ceramic Society, 2018 - Wiley Online Library
ZnO films and Al‐doped ZnO (AZO) films were deposited on p‐Si substrate by magnetron
sputtering to investigate its chemical composition, structural and photoelectric properties …
sputtering to investigate its chemical composition, structural and photoelectric properties …
Damp heat stable doped zinc oxide films
Zinc oxide is widely used as transparent contact in thin film solar cells. We investigate the
damp heat stability of aluminum doped ZnO (ZnO: Al) films sputter deposited at different …
damp heat stability of aluminum doped ZnO (ZnO: Al) films sputter deposited at different …
Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiOx/Poly-Si Passivating Contacts
In high-efficiency silicon solar cells featuring carrier-selective passivating contacts based on
ultrathin SiO x/poly-Si, the appropriate implementation of transparent conductive oxide …
ultrathin SiO x/poly-Si, the appropriate implementation of transparent conductive oxide …
Intense pulsed light in back end processing of solar cells with passivating contacts based on amorphous or polycrystalline silicon layers
Intense pulsed light (IPL) is capable of entirely replacing thermal annealing (curing and
contact formation) within back end processing of silicon solar cells with passivating contacts …
contact formation) within back end processing of silicon solar cells with passivating contacts …