Thermal performance of insulated gate bipolar transistor module using microchannel cooling base plate

M Shi, X Yu, Y Tan, X Wang, X Zhang, J Li - Applied Thermal Engineering, 2022 - Elsevier
The insulated gate bipolar transistor (IGBT) module cannot meet industrial requirements
under high-power density due to the high junction temperature and non-uniform temperature …

IGBT lifetime model considering composite failure modes

L Li, Y He, L Wang, C Wang, X Liu - Materials Science in Semiconductor …, 2022 - Elsevier
As a new generation of power devices, IGBT devices are widely used in fields such as
aerospace, power transmission and transformation. Failures happen to the modules under …

Comparative study of the parameter acquisition methods for the cauer thermal network model of an IGBT module

T An, R Zhou, F Qin, Y Dai, Y Gong, P Chen - Electronics, 2023 - mdpi.com
Under the operating conditions of high power and high switching frequency, an insulated
gate bipolar transistor (IGBT) chip can produce relatively large power loss, causing the …

Octovalve thermal management control for electric vehicle

A Wray, K Ebrahimi - Energies, 2022 - mdpi.com
In the pursuit of more efficient vehicles on the world's roads, the vehicle thermal
management system has become a limiting factor when it comes to EV range and battery …

Performance degradation and reliability analysis of a MEMS flow sensor with accelerated degradation testing

Q Kang, Y Lin, J Tao - Microelectronics Reliability, 2024 - Elsevier
In this article, we research the performance degradation of a MEMS flow sensor with
accelerated degradation testing (ADT). The degradation of temperature stress (T s) on …

Effect of operating conditions on condition monitoring of power electronic converters and a review of normalization schemes

P Sundararajan, MD Siddique… - 2023 11th International …, 2023 - ieeexplore.ieee.org
Power electronic converters have changed the way in which electrical energy is converted
from one form to another form. They are widely used in many critical applications because of …

A Distributed Turn-off Delay Compensator Scheme for Voltage Balancing of Series-connected IGBTs

M Zarghani, F Iannuzzo, F Blaabjerg… - IEEE Journal of …, 2024 - ieeexplore.ieee.org
This article presents a voltage balancing scheme for series-connected insulated gate bipolar
transistors (IGBTs)(SCIs) using a turn-off delay compensator. In SCIs, inherent …

Statistical Analysis of Power Semiconductor Devices Lifetime Test and Lifetime Prediction

X Zhou, Z Xin, Z Wu, K Sheng - IEEE Journal of Emerging and …, 2024 - ieeexplore.ieee.org
Power semiconductor devices are the core components of power electronic systems and the
most fragile part. Power cycling tests and lifetime prediction models are the two main means …

Difference Between the PWM and Standard DC Power Cycling Tests Based on the Finite-Element Simulation

L Xie, L Wu, E Deng, Y Zhang, Y Zhao… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Pulsewidth modulation (PWM) power cycling, which has complex control strategies and high
testing costs, received a lot of attention in recent years because the test conditions are closer …

[HTML][HTML] Thermal cycling characterization of an integrated low-inductance GaN eHEMT power module

Z Sun, M Takahashi, W Guo, S Munk-Nielsen… - Microelectronics …, 2024 - Elsevier
To exploit the potential of wide-bandgap semiconductors in high-frequency applications,
innovative packaging designs are developed to minimize the parasitic inductance of power …