InGaN solar cells: present state of the art and important challenges

AG Bhuiyan, K Sugita, A Hashimoto… - IEEE Journal of …, 2012 - ieeexplore.ieee.org
Solar cells are a promising renewable and carbon-free electric energy resource to address
the fossil-fuel shortage and global warming. Energy conversion efficiencies over 40% have …

III-nitrides for energy production: photovoltaic and thermoelectric applications

N Lu, I Ferguson - Semiconductor Science and Technology, 2013 - iopscience.iop.org
In this review article, we discuss the recent advances in the III-nitrides, in particular GaN and
its ternary alloys, for photovoltaic and thermoelectric devices. The advantages of using the III …

InGaN-based solar cells: a wide solar spectrum harvesting technology for twenty-first century

SR Routray, TR Lenka - CSI Transactions on ICT, 2018 - Springer
Now a days solar photovoltaic (PV) is the promising technology to address global issues
such as carbon-free electricity, shortage of fossil-fuel, global warming and low cost …

Design and fabrication of a photodetector for UV/Blue wavelength region for low-light intensity levels using InGaN/GaN superlattice structure

ND Gupta, K Sumanth, P Yashwanth… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Photodetectors (PDs) are photo-responsive devices, which are frequently used in a variety
of applications such as consumer electronics, space research, environmental monitoring …

Barrier thickness dependence of photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

N Watanabe, H Yokoyama, N Shigekawa… - Japanese Journal of …, 2012 - iopscience.iop.org
We discuss the influence of the barrier thickness of an InGaN/GaN multiple quantum well
(MQW) structure on solar cell performance. As barrier thickness decreases, short-circuit …

Design and Simulation of InGaN/GaN p–i–n Photodiodes

M Elbar, B Alshehri, S Tobbeche… - physica status solidi …, 2018 - Wiley Online Library
InGaN ternary alloys with their band gaps varying from 0.7 to 3.4 eV, are very promising for
photodetector devices operating from UV to IR wavelength range. Using Silvaco–Atlas …

Influence of InGaN/GaN multiple quantum well structure on photovoltaic characteristics of solar cell

N Watanabe, M Mitsuhara, H Yokoyama… - Japanese Journal of …, 2014 - iopscience.iop.org
Abstract We have investigated InGaN/GaN multiple quantum well (MQW) solar cells in terms
of the relationship between the short-circuit current and the MQW structure. We previously …

Dependence of dark current and photoresponse characteristics on polarization charge density for GaN-based avalanche photodiodes

X Wang, W Hu, X Chen, J Xu, L Wang… - Journal of Physics D …, 2011 - iopscience.iop.org
GaN/AlGaN avalanche photodiodes (APD) are fabricated based on GaN/AlGaN materials of
epitaxial growth. Dark current and photoresponse characteristics are shown experimentally …

[PDF][PDF] Simulation analysis to optimize the performance of homojunction pin In0. 7Ga0. 3N solar cell

S Hussain, MT Prodhan… - … Quantum Electronics and …, 2021 - journal-spqeo.org.ua
Simulation analysis has been carried out to determine the perfect structural parameters of
homojunction pin In0. 7Ga0. 3N solar cell to obtain maximum overall efficiency. It has been …

Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications

K Prabakaran, M Jayasakthi, S Surender… - Applied Surface …, 2019 - Elsevier
InGaN/GaN multiple quantum well (MQW) structures were grown on c-plane sapphire
substrate using metal organic chemical vapour deposition technique by varying the MQW …