Work function: Fundamentals, measurement, calculation, engineering, and applications
The work function, which is the energy barrier for an electron escaping from the surface of a
material, is a fundamental material surface property with many applications spanning energy …
material, is a fundamental material surface property with many applications spanning energy …
A journey from bulk MOSFET to 3 nm and beyond
A Samal, SL Tripathi, SK Mohapatra - Transactions on Electrical and …, 2020 - Springer
To overcome scaling issues such as controlling gate leakage, drain induced barrier
lowering, higher subthreshold conduction, polysilicon gate depletion, and other short …
lowering, higher subthreshold conduction, polysilicon gate depletion, and other short …
Highly sensitive N+ pocket doped vertical tunnel FET biosensor with wide range work function modulation gate electrodes
This manuscript addresses the first time implementing binary metal alloy's wide range work
function gate electrodes along with N+ Si0. 55Ge0. 45 pocket in charge plasma dielectric …
function gate electrodes along with N+ Si0. 55Ge0. 45 pocket in charge plasma dielectric …
Spatial composition grading of binary metal alloy gate electrode for short-channel SOI/SON MOSFET application
An overall performance comparison analysis based on 2-D Poisson's equation solution has
been presented here both for silicon-on-insulator (SOI) and silicon-on-nothing (SON) …
been presented here both for silicon-on-insulator (SOI) and silicon-on-nothing (SON) …
Improved switching speed of a CMOS inverter using work-function modulation engineering
This paper presents a detailed numerical analysis of work-function modulated cylindrical
gate metal-oxide-semiconductor field-effect transistor (MOSFET)-based CMOS inverter …
gate metal-oxide-semiconductor field-effect transistor (MOSFET)-based CMOS inverter …
Quantum simulation of a junctionless carbon nanotube field-effect transistor with binary metal alloy gate electrode
K Tamersit - Superlattices and Microstructures, 2019 - Elsevier
In this paper, a quantum simulation study that highlights the role of linearly graded binary
metal alloy (LGBMA) gate in improving the performance of coaxially gated junctionless …
metal alloy (LGBMA) gate in improving the performance of coaxially gated junctionless …
Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces
T Gougousi - Progress in Crystal Growth and Characterization of …, 2016 - Elsevier
The goal of this article is to provide an overview of the state of knowledge regarding the
Atomic Layer Deposition (ALD) of metal oxides on III–V semiconductor surfaces. An …
Atomic Layer Deposition (ALD) of metal oxides on III–V semiconductor surfaces. An …
An improved analytical modeling and simulation of gate stacked linearly graded work function vertical TFET
In this paper, a 2D analytical potential model for n+ SiGe Gate stacked linearly graded work
function Vertical TFET (n+ SiGe GS-LGW-VTFET) is developed with incorporating the effect …
function Vertical TFET (n+ SiGe GS-LGW-VTFET) is developed with incorporating the effect …
Implementation of linearly modulated work function AσB1−σ gate electrode and Si0.55Ge0.45 N+ pocket doping for performance improvement in gate stack …
In this work, the characteristics of linearly graded work function (LGW) by utilizing the
composition of binary metal alloy A σ B 1− σ gate electrode and the characteristics of Si-Si …
composition of binary metal alloy A σ B 1− σ gate electrode and the characteristics of Si-Si …
Compact 2D modeling and drain current performance analysis of a work function engineered double gate tunnel field effect transistor
The ongoing trend of device dimension miniaturization is attributed to a large extent by the
development of several non-conventional device structures among which tunneling field …
development of several non-conventional device structures among which tunneling field …