This article reviews the theory of electron-phonon interactions in solids from the point of view
of ab initio calculations. While the electron-phonon interaction has been studied for almost a …

This article reviews the current status of lattice-dynamical calculations in crystals, using
density-functional perturbation theory, with emphasis on the plane-wave pseudopotential …

Using first-principles theory, we investigated the most stable configuration for the Rh dopant
on a MoSe2 monolayer, and the interaction of the Rh-doped MoSe2 (Rh-MoSe2) monolayer …

Radio frequency (RF) microelectromechanical systems (MEMS) based on Al1–x Sc x N are
replacing AlN-based devices because of their higher achievable bandwidths, suitable for the …

The stress states in unintentionally doped GaN epilayers grown on Si (111), 6H-SiC (0001),
and c-plane sapphire, and their effects on optical properties of GaN films were investigated …

The preparation of high-purity and-quality gallium nitride nanowires is accomplished by a
catalytic growth using gallium and ammonium. A series of catalysts and different reaction …

Anomalous Raman modes have been reported in several recent papers dealing with doped-
and undoped-ZnO layers grown by different methods. Most of these anomalous Raman …

Using first-principles calculation within density functional theory (DFT), we study the gas
(CO, NH 3, H 2 S, NO 2, NO, SO 2) adsorption properties on the surface of single-layer …

Three-dimensional (3D) GaN is a III-V compound semiconductor with potential
optoelectronic applications. In this paper, starting from 3D GaN in wurtzite and zinc-blende …

We have investigated the lattice dynamics of a wurtzite GaN single crystal by inelastic x-ray
scattering. Several dispersion branches and phonons at high-symmetry points have been …