A Salemi, H Elahipanah, K Jacobs… - IEEE Electron …, 2017 - ieeexplore.ieee.org
Implantation-free mesa-etched ultra-high-voltage (0.08 mm 2) 4H-SiC bipolar junction transistors (BJTs) with record current gain of 139 are fabricated, measured, and analyzed by …
H Elahipanah, A Salemi, CM Zetterling… - IEEE Electron Device …, 2014 - ieeexplore.ieee.org
Implantation-free 4H-SiC bipolar junction transistors with multiple-shallow-trench junction termination extension have been fabricated. The maximum current gain of 40 at a current …
A Salemi, H Elahipanah, G Malm… - 2015 IEEE 27th …, 2015 - ieeexplore.ieee.org
Implantation-free mesa-etched 4H-SiC bipolar junction transistors (BJTs) with a near-ideal breakdown voltage of 5.6 kV (about 92% of the theoretical value) are fabricated, measured …
This paper reports the application of silicon bipolar junction transistor (BJT) modeling techniques to the modeling of dynamic behavior of high-voltage 4H-SiC BJTs, and the …
In an increasingly electrified, technology-driven world, power electronics is central to the entire clean energy manufacturing economy. Power switching semiconductor devices are …
S Sundaresan, S Jeliazkov, H Issa… - 2014 IEEE 26th …, 2014 - ieeexplore.ieee.org
A comprehensive evaluation of high-temperature (up to 200° C) on-state, blocking voltage and switching operation of 1200 V-class SiC Junction Transistors (SJTs) with on-chip …
Silicon carbide (SiC) is an attractive material for high-voltage and hightemperature electronic applications owing to the wide bandgap, high critical electric field, and high …
H Elahipanah, A Salemi, CM Zetterling… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A novel lithographic method called intertwined design is demonstrated for high-power SiC devices to improve the area usage and current drive with more uniform current distribution …
A Salemi, H Elahipanah, CM Zetterling… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Geometrical effects on the forward characteristics of high-power bipolar junction transistors are studied. An implantation-free area optimized junction termination is implemented in …