Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

Implantation-free mesa-etched ultra-high-voltage (0.08 mm 2) 4H-SiC bipolar junction
transistors (BJTs) with record current gain of 139 are fabricated, measured, and analyzed by …

Implantation-free 4H-SiC bipolar junction transistors with multiple-shallow-trench junction
termination extension have been fabricated. The maximum current gain of 40 at a current …

Implantation-free mesa-etched 4H-SiC bipolar junction transistors (BJTs) with a near-ideal
breakdown voltage of 5.6 kV (about 92% of the theoretical value) are fabricated, measured …

This paper reports the application of silicon bipolar junction transistor (BJT) modeling
techniques to the modeling of dynamic behavior of high-voltage 4H-SiC BJTs, and the …

In an increasingly electrified, technology-driven world, power electronics is central to the
entire clean energy manufacturing economy. Power switching semiconductor devices are …

A comprehensive evaluation of high-temperature (up to 200° C) on-state, blocking voltage
and switching operation of 1200 V-class SiC Junction Transistors (SJTs) with on-chip …

Silicon carbide (SiC) is an attractive material for high-voltage and hightemperature
electronic applications owing to the wide bandgap, high critical electric field, and high …

A novel lithographic method called intertwined design is demonstrated for high-power SiC
devices to improve the area usage and current drive with more uniform current distribution …

Geometrical effects on the forward characteristics of high-power bipolar junction transistors
are studied. An implantation-free area optimized junction termination is implemented in …