A floating-body transistor based two stages power amplifier (PA) with lateral NPN based
bandgap voltage reference (BVR) is implemented in a 130 nm Silicon-On-Insulator (SOI) …

This study presents a dual-adaptive bias (DAB) scheme for controlling the bias of peak
amplifiers (PeAs) in Doherty power amplifiers (DPAs). The proposed scheme enhances the …

This paper present a multi-band Doherty power amplifier (DPA) implemented in a 0.18 um
CMOS SOI. In order to enable the multi-band operation, the proposed DPA employs tunable …

This paper presents a two-stage stacked power amplifier integrated circuit (PAIC) for
broadband and high efficiency using a 2-μm InGap/GaAs HBT process with a second …

The need for RF Front-Ends Module (FEM) with reduced size and cost is driving research
towards highly integrated Power Amplifiers (PA) with challenging linearity and efficiency …

Mobile communication technologies are becoming increasingly sophisticated and have
experienced rapid evolution over the last few decades, and this is especially true for the …

A 24GHz power amplifier chip in 65nm CMOS process technology is presented. Impedance
matching based on on-chip transformer coupling can reduce chip size and improve chip …

Accurate MOSFET device modeling is an extremely important procedure to develop low-cost
silicon integrated circuits using CMOS technology for higher speed and higher frequency …