Investigating the electronic structure, elastic, optical, and thermoelectric nature of novel AsIrX (X= S, Se, Te) ternary chalcogenides

MS Khan, B Gul, AS Mohamed, G Khan, SM Aziz… - Physica B: Condensed …, 2025 - Elsevier
The high thermal stability and adjustable optoelectronic properties of ternary chalcogenide
semiconductors make them distinguishable among various classes of materials. Using the …

Identification of lead-free Rb2AgBiX6 (X= Cl, Br, I) double halide perovskites for promising photovoltaic applications: First-principles investigations

MA Rehman, ZU Rehman, M Usman, N Bano… - Physica B: Condensed …, 2024 - Elsevier
This study examines double halide perovskites Rb 2 AgBiX 6 (X= Cl, Br, I) using first-
principles calculations, revealing their potential for various applications. The compounds …

Study of the optoelectronic properties and the doping effect on different atoms of the CsSnBr3 supercell to absorb visible light: First-principles calculations

N El Hidaoui, F Goumrhar, R Assad, LB Drissi… - Physica B: Condensed …, 2024 - Elsevier
Lead-free halide perovskites are prototype materials-based solar cells and many other
devices optoelectronic, that have exhibited high power conversion efficiencies, high …

Optical properties of quaternary GaMnAsP thin layer grown by molecular beam epitaxy

W Ouerghui, M Gassoumi, L Beji, MA Maaref - Physica E: Low-dimensional …, 2021 - Elsevier
In this study, ellipsometry measurement have been used to investigate optical properties of
GaMnAsP/GaAs structure. Within the framework of the three-layer model we have estimated …

Carrier localization in quaternary ferromagnetic semiconductor films

S Dong, L Riney, X Liu, L Guo, RK Zheng, X Li… - Physical Review …, 2021 - APS
Motivated by the fact that holes in the Ga 1–x Mn x As family of ferromagnetic
semiconductors play a key role in determining their ferromagnetic properties, we have …

[HTML][HTML] Dependence of ferromagnetic properties on phosphorus concentration in Ga1-xMnxAs1-yPy

X Li, X Liu, S Dong, C Gorsak, JK Furdyna… - Journal of Vacuum …, 2018 - pubs.aip.org
A series of Ga 1-x Mn x As 1-y P y thin films grown on GaAs (100) substrates by molecular
beam epitaxy were systematically investigated to establish the effect of phosphorous on …

Electronic structure and intrinsic mobilities of one-dimensional CuO2 atomic wires: A first-principles study

H Song, W Zhang, Z Liu, Z Guan, C Feng… - Physica B: Condensed …, 2024 - Elsevier
Herein, the electronic structure and intrinsic carrier mobility of the one-dimensional CuO 2
atomic chain were studied by first-principles calculations. The band structure of the CuO 2 …

Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry

S Dong, YL Wang, SK Bac, X Liu, V Vlasko-Vlasov… - Physical Review …, 2019 - APS
We report on the observation of a field-induced magnetic bias effect in a G a 0.94 M n 0.06 A
s 1− y P y thin film with digitally graded phosphorus content. Although phosphorus …

The half-metallic characteristic of Cr-doped rutile germanium oxide-based dilute magnetic semiconductor predicted by first-principles calculations

A Labrag, M Bghour, EM Salmani, F Goumrhar… - Indian Journal of …, 2022 - Springer
This paper reported on the theoretical investigations with first principle calculations on the
electronic and band structure properties of Cr-doped GeO2 rutile. Firstly, it discussed the half …

Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film

W Wang, J Chen, J Deng, J Che, B Hu, X Cheng - RSC advances, 2019 - pubs.rsc.org
The effect of Sb content on the in-plane anisotropic magnetoresistance (AMR) of the
quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) was investigated. The results …