For all technologies, from flint arrowheads to DNA microarrays, patterning the functional
material is crucial. For semiconductor integrated circuits (ICs), it is even more critical than for …

Historically, in the mass production of semiconductor devices, exposure tools have been
repeatedly replaced with those with a shorter wavelength to meet the resolution …

This new edition of the bestselling Microlithography: Science and Technology provides a
balanced treatment of theoretical and operational considerations, from elementary concepts …

We report on the extreme ultraviolet (EUV) patterning performance of tin-oxo cages. These
cage molecules were already known to function as a negative tone photoresist for EUV …

We discuss the future of resist materials for sub-20-nm lithography and believe that polymer-
bound PAG-based resists will be used to 16-nm node. There has been enough progress in …

In chemically amplified resists that utilize acid-catalytic reactions for pattern formation, proton
dynamics is important from the viewpoints of the insoluble layer formation due to acid loss …

Protons generated in chemically amplified resists drive pattern formation reactions such as
acid catalytic deprotection reactions. Proton dynamics is controlled by the addition of base …

Photoresist materials enable the fabrication of advanced integrated circuits with ever‐
decreasing feature sizes. As next‐generation light sources are developed, using extreme …

抄録 Extreme ultraviolet lithography (EUVL) is the main contender for high volume
semiconductor lithography patterning at the 22 nm half-pitch node. The most aggressive …

A soft-contact film transfer method was developed to prepare multilayer photoresist thin films
that enable high-resolution spectroscopic and reflectivity measurements for determining the …