Atomic layer deposition of metal oxides and chalcogenides for high performance transistors
Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …
thin film materials at the nanoscale for applications in transistors. This review …
Transparent heat regulating (THR) materials and coatings for energy saving window applications: Impact of materials design, micro-structural, and interface quality on …
This review highlights the development of energy saving transparent heat regulating (THR)
materials and coating for energy saving window applications. Current state-of-the-art …
materials and coating for energy saving window applications. Current state-of-the-art …
Titanium dioxide thin films by atomic layer deposition: A review
JP Niemelä, G Marin, M Karppinen - Semiconductor science and …, 2017 - iopscience.iop.org
Within its rich phase diagram titanium dioxide is a truly multifunctional material with a
property palette that has been shown to span from dielectric to transparent-conducting …
property palette that has been shown to span from dielectric to transparent-conducting …
Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer
In current work, the effect of the growth cycles of atomic-layer-deposition (ALD) derived
ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical …
ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical …
Converting lignocellulosic pentosan-derived yeast single cell oil into aromatics: biomass to bio-BTX
The ever increasing demand for sustainable energy and chemicals in association with the
declining reserve for fossil fuel, are stimulating the search for alternative feedstocks and …
declining reserve for fossil fuel, are stimulating the search for alternative feedstocks and …
Native Oxide Transport and Removal During Atomic Layer Deposition of TiO2 Films on GaAs(100) Surfaces
AJ Henegar, AJ Cook, P Dang… - Acs Applied Materials & …, 2016 - ACS Publications
In this work, we studied the evolution and transport of the native oxides during the atomic
layer deposition (ALD) of TiO2 on GaAs (100) from tetrakis dimethyl amino titanium and …
layer deposition (ALD) of TiO2 on GaAs (100) from tetrakis dimethyl amino titanium and …
Transparent capacitors based on nanolaminate Al2O3/TiO2/Al2O3 with H2O and O3 as oxidizers
Transparent capacitors with nanolaminate Al 2 O 3/TiO 2/Al 2 O 3 (ATA) hybrid dielectrics
have been prepared on quartz glass by atomic layer deposition. The maximal capacitance …
have been prepared on quartz glass by atomic layer deposition. The maximal capacitance …
Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics
We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-
insulator-semiconductor (MIS) devices with Al 2 O 3 or AlTiO (an alloy of Al 2 O 3 and TiO 2) …
insulator-semiconductor (MIS) devices with Al 2 O 3 or AlTiO (an alloy of Al 2 O 3 and TiO 2) …
Interface Properties of Atomic Layer Deposited TiO2/Al2O3 Films on In0.53Ga0.47As/InP Substrates
Electrical and interfacial properties of metal-oxide-semiconductor (MOS) capacitors
fabricated using atomic layer deposited bilayer TiO2/Al2O3 films on In0. 53Ga0. 47As/InP …
fabricated using atomic layer deposited bilayer TiO2/Al2O3 films on In0. 53Ga0. 47As/InP …
Mist chemical vapor deposition of Al1− xTixOy thin films and their application to a high dielectric material
We investigated the synthesis of amorphous aluminum titanium oxide Al 1− x Ti x O y thin
films from a Al (acac) 3 and Ti (acac) 4 mixture using CH 3 OH/H 2 O as a solvent through …
films from a Al (acac) 3 and Ti (acac) 4 mixture using CH 3 OH/H 2 O as a solvent through …