Junctionless transistors: State-of-the-art
A Nowbahari, A Roy, L Marchetti - Electronics, 2020 - mdpi.com
Recent advances in semiconductor technology provide us with the resources to explore
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
Cold source field-effect transistors: Breaking the 60-mV/decade switching limit at room temperature
S Wang, J Wang, T Zhi, J Xue, D Chen, L Wang… - Physics Reports, 2023 - Elsevier
With the size of devices continuously shrinking, power consumption has become one of the
most critical issues concerning modern integrated circuits, which can be reduced by …
most critical issues concerning modern integrated circuits, which can be reduced by …
Modeling the threshold voltage of core-and-outer gates of ultra-thin nanotube Junctionless-double gate-all-around (NJL-DGAA) MOSFETs
The present article deals with the analytical modeling of threshold voltage of an ultra-thin
nanotube Junctionless double-gate-all-around (NJL-DGAA) metal-oxide-semiconductor field …
nanotube Junctionless double-gate-all-around (NJL-DGAA) metal-oxide-semiconductor field …
Analytical surface potential modeling and simulation of junction-less double gate (JLDG) MOSFET for ultra low-power analog/RF circuits
In this paper, a simple structure for short channel junction-less double gate (JLDG) MOSFET
is proposed. Further expression for surface potential of JLDG has been derived using 2D …
is proposed. Further expression for surface potential of JLDG has been derived using 2D …
Reliability analysis of junction-less double gate (JLDG) MOSFET for analog/RF circuits for high linearity applications
S Rai - Microelectronics journal, 2017 - Elsevier
Junctionless double gate (JLDG) MOSFET in sub nano meter regime has been the preferred
choice for researchers as the leakage current in a JLDG MOSFET is significantly less …
choice for researchers as the leakage current in a JLDG MOSFET is significantly less …
Revisiting the doping requirement for low power junctionless MOSFETs
MS Parihar, A Kranti - Semiconductor Science and Technology, 2014 - iopscience.iop.org
In this work, we revisit the requirement of higher channel doping (≥ 10 19 cm− 3) in
junctionless (JL) double gate MOSFETs. It is demonstrated that moderately doped (10 18 …
junctionless (JL) double gate MOSFETs. It is demonstrated that moderately doped (10 18 …
Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs
Analytical models for channel potential, threshold voltage, and subthreshold swing of the
short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model …
short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model …
Comparative Analysis of Junctionless FinFET and Inverted Mode FinFET as Phosphine (PH3) Gas Sensor
In this work, a comparative analysis of a junctionless mode FinFET and an inverted mode
FinFET gas sensor is carried out. The sensors are designed to detect the presence of …
FinFET gas sensor is carried out. The sensors are designed to detect the presence of …
Comparative analysis of dielectric modulated junctionless FinFET biosensor and junctionless DG MOSFET biosensor for medical instrumentation
In this work, a comprehensive comparative analysis of a junctionless FinFET and a
junctionless double gate (DG) MOSFET as label free biosensor has been carried out …
junctionless double gate (DG) MOSFET as label free biosensor has been carried out …
Analysis and simulation of a junctionless double gate MOSFET for high-speed applications
R Hosseini - Journal of the Korean Physical Society, 2015 - Springer
In this paper, the electrical characteristics of a junctionless double-gate metal-oxide-
semiconductor field-effect-transistor (JL DG MOSFET) and that of inversion-mode double …
semiconductor field-effect-transistor (JL DG MOSFET) and that of inversion-mode double …